Product Information

PBSS4160QA

PBSS4160QA electronic component of NXP

Datasheet
TRANSISTOR, AEC-Q101, NPN, 60V, DFN1010D
Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5: USD 0.3779 ea
Line Total: USD 1.89

0 - Global Stock
MOQ: 5  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 5
Multiples : 1
5 : USD 0.3779
100 : USD 0.1892
500 : USD 0.1704
1000 : USD 0.1335
2500 : USD 0.1204

Read More Specifications

     
Manufacturer
Product Category
Transistor Polarity
Brand
Collector Emitter Voltage Vbrceo
Transition Frequency Ft
Power Dissipation Pd
Dc Collector Current
Dc Current Gain Hfe
Transistor Case Style
No. Of Pins
Operating Temperature Max
Msl
Svhc
LoadingGif

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Additional Infomation About Product

PBSS4160QA 60 V, 1 A NPN low VCEsat (BISS) transistor 23 August 2013 Product data sheet 1. General description NPN low V Breakthrough In Small Signal (BISS) transistor in a leadless ultra small CEsat DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. PNP complement: PBSS5160QA. 2. Features and benefits Very low collector-emitter saturation voltage V CEsat High collector current capability I and I C CM High collector current gain h at high I FE C High energy efficiency due to less heat generation Reduced Printed-Circuit Board (PCB) area requirements Solderable side pads AEC-Q101 qualified 3. Applications Loadswitch Battery-driven devices Power management Charging circuits Power switches (e.g. motors, fans) 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-emitter open base - - 60 V CEO voltage I collector current - - 1 A C I peak collector current single pulse t 1 ms - - 1.5 A CM p R collector-emitter I = 1 A I = 0.1 A pulsed t 300 s - 170 235 m CEsat C B p saturation resistance 0.02 T = 25 C amb Scan or click this QR code to view the latest information for this product DFN1010D-3NXP Semiconductors PBSS4160QA 60 V, 1 A NPN low VCEsat (BISS) transistor 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 B base C 1 2 E emitter B 3 C collector 4 3 E 4 C collector sym123 2 Transparent top view DFN1010D-3 (SOT1215) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PBSS4160QA DFN1010D-3 plastic thermal enhanced ultra thin small outline package no SOT1215 leads 3 terminals 7. Marking Table 4. Marking codes Type number Marking code PBSS4160QA 11 00 10 READING DIRECTION MARKING CODE (EXAMPLE) YEAR DATE CODE VENDOR CODE PIN 1 MARK-FREE AREA INDICATION MARK READING EXAMPLE: 11 01 10 aaa-008041 Fig. 1. DFN1010D-3 (SOT1215) binary marking code description PBSS4160QA All information provided in this document is subject to legal disclaimers. NXP N.V. 2013. All rights reserved Product data sheet 23 August 2013 2 / 17

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