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On Jul 17, 2025

IRF640N MOSFETs by Infineon – 200V Power Switch

IRF640N MOSFETs by Infineon – High-Performance N-Channel Power Switching

The MOSFETs IRF640N by Infineon are rugged, high-efficiency N-channel power MOSFETs designed for fast switching and low power loss in a wide range of electronic applications. Featuring a low RDS(on) and high voltage tolerance, these transistors are ideal for use in motor drivers, power supplies, DC-DC converters, and more.

In this article, we’ll dive into the technical specs, performance advantages, and real-world applications of the IRF640N MOSFETs by Infineon—a reliable solution for engineers requiring fast, efficient power control.

Technical Specifications of IRF640N

Manufacturer: Infineon Technologies
Part Number: IRF640N
Type: N-Channel Power MOSFET
Drain-Source Voltage (VDS): 200V
Continuous Drain Current (ID): 18A
Gate Threshold Voltage: 2.0V – 4.0V
RDS(on): 0.18 Ohms (max)
Total Gate Charge (Qg): 67 nC
Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C to +175°C
RoHS Compliant: Yes

The IRF640N MOSFETs by Infineon deliver powerful, efficient switching performance for both high-voltage and high-current applications.

Key Features of IRF640N

High Voltage Capability (200V) – Ideal for demanding power circuits
Fast Switching Speed – Enables efficient DC-DC and AC-DC conversion
Low Gate Drive Requirements – Reduces power loss in logic-level circuits
Low RDS(on) – Enhances thermal performance and energy efficiency
TO-220 Package – Compatible with standard heat sinks and PCBs

Thanks to their robust design and switching performance, IRF640N MOSFETs by Infineon are trusted in high-efficiency power systems worldwide.

Applications of IRF640N MOSFETs

These power MOSFETs are widely used in industrial and consumer electronics:

DC-DC and AC-DC Converters
Switching Power Supplies (SMPS)
Inverters and Motor Drivers
LED Lighting Circuits
Uninterruptible Power Supplies (UPS)
Battery-Powered Equipment

No matter the use, MOSFETs by Infineon ensure fast, low-loss switching and stable thermal performance.

Wiring and Connection Overview

Basic Setup for IRF640N:

Gate — Controlled by PWM/Logic Signal  
Drain — Connected to Load  
Source — Connected to Ground

Add a gate resistor (10–100O) and flyback diode (for inductive loads) for improved reliability and performance.

Use Case Scenario: Power Inverter Design

Scenario: A hardware designer needed a reliable, high-voltage MOSFET for a compact solar inverter.
Problem: Existing MOSFETs overheated and failed under load.
Solution: The IRF640N MOSFETs by Infineon were implemented to handle higher voltages and improve thermal control.
Result: Increased efficiency, reduced heat dissipation, and longer product lifespan.

Download Datasheet for IRF640N

Need full specs, switching curves, or thermal ratings?

Download IRF640N Datasheet from Xon Electronics

Why Buy from Xon Electronics?

Choose Xon Electronics for trusted sourcing of MOSFETs by Infineon:

100% Original Infineon Devices
Fast Global Shipping – USA, India, Australia, Europe & more
Bulk Pricing for OEMs & Contract Manufacturers
Expert Technical Support
Secure Online Ordering and Tracking

Buy IRF640N MOSFETs by Infineon at www.xonelec.com today.

Conclusion

The IRF640N MOSFETs by Infineon provide powerful switching performance, high voltage handling, and low RDS(on) in a compact TO-220 package. Whether you're working on converters, inverters, or high-speed power designs, these transistors are engineered for efficiency and durability. Available now at Xon Electronics with worldwide delivery, including the USA, India, Australia, Europe, and beyond.