PHB160NQ08T,118 NXP

PHB160NQ08T N-channel TrenchMOS standard level FET Rev. 02 10 March 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits Low conduction losses due to low Suitable for standard level gate drive on-state resistance sources 1.3 Applications DC-to-DC convertors Motors, lamps and solenoids General industrial applications Uninterruptible power supplies 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 75 V DS j j I drain current T =25C V =10V --75 A D mb GS see Figure 1 see Figure 3 P total power T = 25 C see Figure 2 - - 300 W tot mb dissipation Dynamic characteristics Q gate-drain charge V =10V I =25A -28 - nC GD GS D V =60V T =25C DS j see Figure 11 Static characteristics R drain-source V =10V I =25A -4.8 5.6 m DSon GS D on-state resistance T = 25 C see Figure 9 j see Figure 10NXP Semiconductors PHB160NQ08T N-channel TrenchMOS standard level FET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1G gate mb D 2D drain 1 3S source G mb D mounting base connected to drain mbb076 S 2 13 SOT404 (D2PAK) 1 It is not possible to make connection to pin 2. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PHB160NQ08T D2PAK plastic single-ended surface-mounted package (D2PAK) 3 leads (one SOT404 lead cropped) 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C T 175 C - 75 V DS j j V drain-gate voltage T 25 C T 175 C R =20k -75 V DGR j j GS V gate-source voltage -20 20 V GS I drain current V =10V T = 100 C see Figure 1 -75 A D GS mb V =10V T =25C see Figure 1 -75 A GS mb see Figure 3 I peak drain current t 10 s pulsed T =25C see Figure 3 -240 A DM p mb P total power dissipation T =25C see Figure 2 -300 W tot mb T storage temperature -55 175 C stg T junction temperature -55 175 C j Source-drain diode I source current T =25C - 75 A S mb I peak source current t 10 s pulsed T =25C - 240 A SM p mb Avalanche ruggedness E non-repetitive V =10V T =25C I =75A V 75 V -560 mJ DS(AL)S GS j(init) D sup drain-source avalanche unclamped t = 0.15 ms R =50 p GS energy PHB160NQ08T 2 NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 10 March 2009 2 of 12