Product Information

PHD13003C

PHD13003C electronic component of NXP

Datasheet
TRANSISTOR,DIODE,NPN,400V,1.5A,TO92
Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.4279 ea
Line Total: USD 0.43

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Mon. 13 May to Fri. 17 May

MOQ : 1
Multiples : 1
1 : USD 0.4279
10 : USD 0.2903
100 : USD 0.1376
1000 : USD 0.1051
2500 : USD 0.0877
10000 : USD 0.0794

Read More Specifications

     
Manufacturer
Product Category
Transistor Polarity
Collector Emitter Voltage Vbrceo
Transition Frequency Ft
Power Dissipation Pd
Dc Collector Current
Dc Current Gain Hfe
Transistor Case Style
No Of Pins
Operating Temperature Max
Msl
Svhc
LoadingGif

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Additional Infomation About Product

PHD13003C NPN power transistor with integrated diode Rev. 01 29 July 2010 Product data sheet 1. Product profile 1.1 General description High voltage, high speed, planar passivated NPN power switching transistor with integrated anti-parallel emitter-collector diode in a SOT54 plastic package 1.2 Features and benefits Fast switching High voltage capability High typical DC current gain Integrated anti-parallel E-C diode 1.3 Applications Compact fluorescent lamps (CFL) Off-line self-oscillating power supplies (SOPS) for battery charging Low power electronic lighting ballasts 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit I collector current DC - - 1.5 A C P total power T 25 C see Figure 1 --2.1 W tot lead dissipation V collector-emitter V=0V --700V CESM BE peak voltage Static characteristics h DC current gain I = 0.5 A V =2V 817 25 FE C CE T =25C jPHD13003C NXP Semiconductors NPN power transistor with integrated diode 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 B base C 2 C collector 3E emitter B E sym131 3 2 1 SOT54 (TO-92) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PHD13003C TO-92 plastic single-ended leaded (through hole) package 3 leads SOT54 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V collector-emitter peak voltage V = 0 V - 700 V CESM BE V collector-base voltage I = 0 A - 700 V CBO E V collector-emitter voltage I = 0 A - 400 V CEO B I collector current DC - 1.5 A C I peak collector current - 3 A CM I base current DC - 0.75 A B I peak base current - 1.5 A BM P total power dissipation T 25 C see Figure 1 -2.1 W tot lead T storage temperature -65 150 C stg T junction temperature - 150 C j V emitter-base voltage I = 0 A I(Emitter) = 10 mA - 9 V EBO C PHD13003C All information provided in this document is subject to legal disclaimers. NXP B.V. 2010. All rights reserved. Product data sheet Rev. 01 29 July 2010 2 of 12

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