PHD34NQ10T,118

PHD34NQ10T N-channel TrenchMOS standard level FET Rev. 03 14 December 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits Higher operating power due to low Suitable for high frequency thermal resistance applications due to fast switching characteristics Low conduction losses due to low on-state resistance 1.3 Applications DC-to-DC converters Switched-mode power supplies 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C; T 175C --100V DS j j I drain current T =25C; V=10V --35 A D mb GS P total power dissipation T=25C --136W tot mb Static characteristics R drain-source on-state V =10V; I =17A; - 3540m DSon GS D resistance T =25C j Dynamic characteristics Q gate-drain charge V =10V; I =34A; -18 - nC GD GS D V =80V; T =25C DS jPHD34NQ10T NXP Semiconductors N-channel TrenchMOS standard level FET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D [1] 2 D drain 3S source G mb D mounting base; connected to drain mbb076 S 2 1 3 SOT428 (DPAK) [1] It is not possible to make connection to pin 2. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PHD34NQ10T DPAK plastic single-ended surface-mounted package (DPAK); 3 leads SOT428 (one lead cropped) 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C; T 175 C - 100 V DS j j V drain-gate voltage T 25 C; T 175 C; R =20k - 100 V DGR j j GS V gate-source voltage -20 20 V GS I drain current V =10V; T =25C - 35 A D GS mb V =10V; T = 100 C - 25 A GS mb I peak drain current pulsed; T = 25 C - 140 A DM mb P total power dissipation T = 25 C - 136 W tot mb T storage temperature -55 175 C stg T junction temperature -55 175 C j Source-drain diode I source current T =25C - 35 A S mb I peak source current pulsed; T = 25 C - 140 A SM mb Avalanche ruggedness E non-repetitive drain-source avalanche V =10V; T =25C; I =26A; - 170 mJ DS(AL)S GS j(init) D energy V 25 V; unclamped; t = 100 s; sup p R =50 GS I non-repetitive avalanche current V 25 V; V =10V; -35 A AS sup GS T =25C; R =50 ; unclamped j(init) GS PHD34NQ10T All information provided in this document is subject to legal disclaimers. NXP B.V. 2010. All rights reserved. Product data sheet Rev. 03 14 December 2010 2 of 12