PMBFJ310,215 NXP

PMBFJ310,215 electronic component of NXP
PMBFJ310,215 NXP
PMBFJ310,215 JFET
PMBFJ310,215  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of PMBFJ310,215 JFET across the USA, India, Europe, Australia, and various other global locations. PMBFJ310,215 JFET are a product manufactured by NXP. We provide cost-effective solutions for JFET, ensuring timely deliveries around the world.

Part No. PMBFJ310,215
Manufacturer: NXP
Category: JFET
Description: JFET JFET N-CHAN 25V
PMBFJ310,215 is a N-channel, logic level compatible FET transistor with 315 mO RDS(on).
Datasheet: PMBFJ310,215 Datasheet (PDF)
Price (USD)
308: USD 0.1087 ea
Line Total: USD 33.48 
Availability : 0
  
QtyUnit Price
308$ 0.1087

Availability 0
Ship by Mon. 11 Aug to Fri. 15 Aug
MOQ : 1
Multiples : 10
QtyUnit Price
1$ 0.1287
5$ 0.1287

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
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Mounting Style
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Drain Source Voltage Vds
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Gate-Source Breakdown Voltage
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We are delighted to provide the PMBFJ310,215 from our JFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PMBFJ310,215 and other electronic components in the JFET category and beyond.

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The PMBFJ310,215 is part of NXP’s PowerJFET series and is a 30-V, N-channel Junction Field-Effect Transistor (JFET) with a very low on-state resistance (RDS(on)). This N-channel JFET is suitable for applications that require low-noise and high-frequency signal amplification. It has a breakdown voltage of 30V, gate threshold voltage of 4.2V, and a maximum drain current of 215mA. Additionally, it is designed to pass through minimal amounts of noise and comes with an operating temperature range of -55°C to 150°C.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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