PMBFJ176,215 NXP

DISCRETE SEMICONDUCTORS DATA SHEET PMBFJ174 to 177 P-channel silicon field-effect transistors Product specification April 1995NXP Semiconductors Product specification P-channel silicon field-effect transistors PMBFJ174 to 177 DESCRIPTION Silicon symmetrical p-channel junction FETs in plastic microminiature SOT23 envelopes.They are intended for application with analogue switches, choppers, commutators etc. using SMD technology. A special feature is 3 the interchangeability of the drain and handbook, halfpage source connections. d g s PINNING 12 1 = drain Top view MAM386 2 = source 3= gate Note 1. Drain and source are interchangeable. Fig.1 Simplified outline and symbol, SOT23. Marking codes: 174 : p6X 175 : p6W 176 : p6S 177 : p6Y QUICK REFERENCE DATA Drain-source voltage V max. 30 V DS Gate-source voltage V max. 30 V GSO Gate current I max. 50 mA G Total power dissipation up to T =25 CP max. 300 mW amb tot PMBFJ174 175 176 177 Drain current 20 7 2 1.5 mA V =15 V V =0 DS GS I DSS 135 70 35 20 mA Drain-source ON-resistance V = 0.1 V V =0 R 85 125 250 300 DS GS DS on April 1995 2