Product Information

PMEG4002EJ

PMEG4002EJ electronic component of NXP

Datasheet
DIODE, SCHO RECT, 40V, 0.2A, SOD323F

Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

100: USD 0.188 ea
Line Total: USD 18.8

0 - Global Stock
MOQ: 100  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Thu. 23 May to Wed. 29 May

MOQ : 100
Multiples : 1
100 : USD 0.188
500 : USD 0.1349
1000 : USD 0.0887
5000 : USD 0.0825

     
Manufacturer
Product Category
Brand
Repetitive Reverse Voltage Vrrm Max
Forward Current Ifav
Diode Configuration
Diode Case Style
No. Of Pins
Forward Voltage Vf Max
Forward Surge Current Ifsm Max
Operating Temperature Max
Product Range
Svhc
Diode Type
Operating Temperature Min
Operating Temperature Range
Semiconductor Technology
LoadingGif

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PMEG4002EJ 200 mA low V MEGA Schottky barrier rectier F Rev. 01 15 May 2009 Product data sheet 1. Product prole 1.1 General description Planar Maximum Efciency General Application (MEGA) Schottky barrier rectier with an integrated guard ring for stress protection, encapsulated in a SOD323F (SC-90) small and at lead Surface-Mounted Device (SMD) plastic package. 1.2 Features n Average forward current: I 0.2 A F(AV) n Reverse voltage: V 40 V R n Low forward voltage n AEC-Q101 qualied n Small and at lead SMD plastic package 1.3 Applications n Low voltage rectication n High efciency DC-to-DC conversion n Switch Mode Power Supply (SMPS) n Reverse polarity protection n Ultra high-speed switching n Low power consumption applications 1.4 Quick reference data Table 1. Quick reference data T =25 C unless otherwise specied. j Symbol Parameter Conditions Min Typ Max Unit I average forward current square wave F(AV) = 0.5 f=20kHz 1 T 130 C - - 0.2 A amb T 145 C - - 0.2 A sp V reverse voltage - - 40 V R V forward voltage I = 0.2 A - 520 600 mV F F I reverse current V = 40 V - 0.7 10 A R R 1 Device mounted on a ceramic Printed-Circuit Board (PCB), Al O , standard footprint. 2 3PMEG4002EJ NXP Semiconductors 200 mA low V MEGA Schottky barrier rectier F 2. Pinning information Table 2. Pinning Pin Description Simplied outline Graphic symbol 1 1 cathode 12 1 2 2 anode sym001 1 The marking bar indicates the cathode. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PMEG4002EJ SC-90 plastic surface-mounted package 2 leads SOD323F 4. Marking Table 4. Marking codes Type number Marking code PMEG4002EJ 1N 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V reverse voltage T =25 C - 40 V R j I average forward current square wave F(AV) = 0.5 f=20kHz 1 T 130 C - 0.2 A amb T 145 C - 0.2 A sp I repetitive peak forward t 1 ms - 2.6 A FRM p current 0.25 2 I non-repetitive peak square wave - 2.75 A FSM forward current t =8ms p 3 4 P total power dissipation T 25 C - 385 mW tot amb 3 5 - 695 mW 3 1 - 1045 mW PMEG4002EJ 1 NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 15 May 2009 2 of 13

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