X-On Electronics has gained recognition as a prominent supplier of PSMN2R2-40BS,118 mosfet across the USA, India, Europe, Australia, and various other global locations. PSMN2R2-40BS,118 mosfet are a product manufactured by NXP. We provide cost-effective solutions for mosfet, ensuring timely deliveries around the world.

PSMN2R2-40BS,118 NXP

PSMN2R2-40BS,118 electronic component of NXP
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Part No.PSMN2R2-40BS,118
Manufacturer: NXP
Category:MOSFET
Description: MOSFET N-CH 40V 100A D2PAK
Datasheet: PSMN2R2-40BS,118 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

4800: USD 2.9796 ea
Line Total: USD 14302.08

Availability - 0
MOQ: 4800  Multiples: 4800
Pack Size: 4800
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Ships to you between Thu. 06 Jun to Wed. 12 Jun

MOQ : 4800
Multiples : 4800
4800 : USD 2.9796

     
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PSMN2R2-40BS N-channel 40 V 2.2 m standard level MOSFET in D2PAK Rev. 1 20 March 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in SOT404 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low switching Suitable for standard level gate drive and conduction losses sources 1.3 Applications DC-to-DC convertors Motor control Load switching Server power supplies 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175C --40 V DS j j 1 I drain current T =25C V =10V - - 100 A D mb GS see Figure 1 total power dissipation T = 25 C see Figure 2 - - 306 W P tot mb junction temperature -55 - 175 C T j Static characteristics drain-source on-state resistance V =10V I =25A T =100C - 2.73 3.2 m R DSon GS D j see Figure 6 V =10V I =25A T =25C - 1.88 2.2 m GS D j see Figure 6 see Figure 13 Dynamic characteristics Q gate-drain charge V =10V I =25A V =20V -25 -nC GD GS D DS see Figure 14 see Figure 15 Q total gate charge - 130 - nC G(tot) Avalanche ruggedness E non-repetitive drain-source V =10V T =25C --1.24J DS(AL)S GS j(init) avalanche energy I =100 A V 40 V unclamped D sup R =50 GS 1 Continuous current is limited by packagePSMN2R2-40BS Nexperia N-channel 40 V 2.2 m standard level MOSFET in D2PAK 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 1 2 D drain 3S source G mb D drain mbb076 S 2 13 SOT404 (D2PAK) 1 It is not possible to make connection to pin 2 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN2R2-40BS D2PAK plastic single-ended surface-mounted package (D2PAK) 3 leads SOT404 (one lead cropped) 4. Marking Table 4. Marking codes Type number Marking code PSMN2R2-40BS PSMN2R2-40BS PSMN2R2-40BS All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 1 20 March 2012 2 of 15

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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