X-On Electronics has gained recognition as a prominent supplier of PSMN2R6-30YLC,115 mosfet across the USA, India, Europe, Australia, and various other global locations. PSMN2R6-30YLC,115 mosfet are a product manufactured by Nexperia. We provide cost-effective solutions for mosfet, ensuring timely deliveries around the world.

PSMN2R6-30YLC,115 Nexperia

PSMN2R6-30YLC,115 electronic component of Nexperia
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See Product Specifications
Part No.PSMN2R6-30YLC,115
Manufacturer: Nexperia
Category:MOSFET
Description: MOSFET N-Ch 30V 2.8mOhms
Datasheet: PSMN2R6-30YLC,115 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

29: USD 0.2683 ea
Line Total: USD 7.78

Availability - 68
Ships to you between
Tue. 04 Jun to Mon. 10 Jun
MOQ: 29  Multiples: 1
Pack Size: 1
Availability Price Quantity
68 - WHS 1


Ships to you between Tue. 04 Jun to Mon. 10 Jun

MOQ : 1
Multiples : 1
1 : USD 0.2683

115 - WHS 2


Ships to you between Tue. 04 Jun to Mon. 10 Jun

MOQ : 1
Multiples : 1
1 : USD 0.3425
10 : USD 0.337
25 : USD 0.3315
100 : USD 0.3259

4048 - WHS 3


Ships to you between Mon. 10 Jun to Wed. 12 Jun

MOQ : 1
Multiples : 1
1 : USD 0.5704
10 : USD 0.552
100 : USD 0.5186
500 : USD 0.483
1500 : USD 0.4324
3000 : USD 0.3749
9000 : USD 0.3162

68 - WHS 4


Ships to you between Tue. 04 Jun to Mon. 10 Jun

MOQ : 29
Multiples : 1
29 : USD 0.2683

115 - WHS 5


Ships to you between Tue. 04 Jun to Mon. 10 Jun

MOQ : 22
Multiples : 1
22 : USD 0.337
25 : USD 0.3315
100 : USD 0.3259

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Gate Charge Qg
Factory Pack Quantity :
Configuration
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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We are delighted to provide the PSMN2R6-30YLC,115 from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PSMN2R6-30YLC,115 and other electronic components in the MOSFET category and beyond.

PSMN2R6-30YLC N-channel 30 V 2.8m logic level MOSFET in LFPAK using NextPower technology Rev. 01 2 May 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High reliability Power SO8 package, Optimised for 4.5V Gate drive utilising qualified to 175C NextPower Superjunction technology Low parasitic inductance and Ultra low QG, QGD, and QOSS for resistance high system efficiencies at low and high loads 1.3 Applications DC-to-DC converters Power OR-ing Lithium-ion battery protection Server power supplies Load switching Sync rectifier 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage 25 C T 175 C - - 30 V DS j 1 I drain current T =25C V =10V --100A D mb GS see Figure 1 P total power T = 25 C see Figure 2 --106W tot mb dissipation junction temperature -55 - 175 C T j Static characteristics drain-source V =4.5 V I =25 A T =25C - 3.1 3.65 m R DSon GS D j on-state resistance see Figure 12 V =10V I =25 A T =25C - 2.35 2.8 m GS D j see Figure 12PSMN2R6-30YLC Nexperia N-channel 30 V 2.8m logic level MOSFET in LFPAK using NextPower Table 1. Quick reference data continued Symbol Parameter Conditions Min Typ Max Unit Dynamic characteristics Q gate-drain charge V =4.5 V I =25A -5.5 -nC GD GS D V =15 V see Figure 14 DS see Figure 15 Q total gate charge V =4.5 V I =25A -18 -nC G(tot) GS D V =15 V see Figure 14 DS see Figure 15 1 Continuous current is limited by package. 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1S source mb D 2S source 3S source G 4 G gate mbb076 S mb D mounting base connected to drain 1234 SOT669 (LFPAK Power-SO8) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN2R6-30YLC LFPAK Power-SO8 plastic single-ended surface-mounted package 4 leads SOT669 4. Marking Table 4. Marking codes 1 Type number Marking code PSMN2R6-30YLC 2C630L 1 % = placeholder for manufacturing site code PSMN2R6-30YLC All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 01 2 May 2011 2 of 15

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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