Product Information

PSMN2R8-80BS

PSMN2R8-80BS electronic component of NXP

Datasheet
MOSFET, N-CH, 80V, 120A, D2PAK
Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 2.236 ea
Line Total: USD 2.24

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1
Multiples : 1
1 : USD 2.236
25 : USD 2.119
100 : USD 1.8265
250 : USD 1.6315
500 : USD 1.43

Read More Specifications

     
Manufacturer
Product Category
Transistor Polarity
Continuous Drain Current Id
Drain Source Voltage Vds
On Resistance Rdson
Rdson Test Voltage Vgs
Threshold Voltage Vgs
Power Dissipation Pd
Transistor Case Style
No Of Pins
Operating Temperature Max
Msl
Svhc
Operating Temperature Min
Operating Temperature Range
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Additional Infomation About Product

PSMN2R8-80BS N-channel 80 V, 3 m standard level FET in D2PAK Rev. 2 29 February 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in D2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low switching Suitable for standard level gate drive and conduction losses 1.3 Applications DC-to-DC converters Motor control Load switch Server power supplies 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175C --80 V DS j j 1 I drain current T =25C V =10V see Figure 1 --120 A D mb GS P total power dissipation T =25C see Figure 2 --306 W tot mb T junction temperature -55 - 175 C j Static characteristics R drain-source on-state V =10V I =25A T = 100 C -4.215 m DSon GS D j resistance see Figure 12 see Figure 13 =10V I =25A T =25C -2.553 m V GS D j see Figure 13 Dynamic characteristics Q gate-drain charge V =10V I =75A V =40V -27 -nC GD GS D DS see Figure 14 see Figure 15 Q total gate charge - 139 - nC G(tot) Avalanche ruggedness E non-repetitive V =10V T =25C I =120 A --676 mJ DS(AL)S GS j(init) D drain-source V 80 V R =50 unclamped sup GS avalanche energy 1 Continuous current is limited by package. D2PAKPSMN2R8-80BS NXP Semiconductors N-channel 80 V, 3 m standard level FET in D2PAK 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 1 2 D drain 3S source G mb D drain mbb076 S 2 13 SOT404 (D2PAK) 1 It is not possible to make connection to pin 2. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN2R8-80BS D2PAK plastic single-ended surface-mounted package (D2PAK) 3 leads SOT404 (one lead cropped) 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C T 175 C - 80 V DS j j V drain-gate voltage T 25 C T 175 C R =20k -80 V DGR j j GS V gate-source voltage -20 20 V GS 1 I drain current V =10V T = 100 C see Figure 1 -120A D GS mb 1 V =10V T =25C see Figure 1 -120A GS mb I peak drain current pulsed t 10 s T =25C see Figure 3 -824A DM p mb P total power dissipation T =25C see Figure 2 -306W tot mb T storage temperature -55 175 C stg T junction temperature -55 175 C j T peak soldering temperature - 260 C sld(M) Source-drain diode 1 I source current T =25C -120A S mb I peak source current pulsed t 10 s T =25C - 824 A SM p mb Avalanche ruggedness E non-repetitive drain-source V =10V T =25C I = 120 A -676mJ DS(AL)S GS j(init) D avalanche energy V 80 V R =50 unclamped sup GS 1 Continuous current is limited by package. PSMN2R8-80BS All information provided in this document is subject to legal disclaimers. NXP B.V. 2012. All rights reserved. Product data sheet Rev. 2 29 February 2012 2 of 14

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

NXP may also be referenced as

FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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