PSMN2R9-25YLC,115 Nexperia

PSMN2R9-25YLC,115 electronic component of Nexperia
PSMN2R9-25YLC,115 Nexperia
PSMN2R9-25YLC,115 MOSFETs
PSMN2R9-25YLC,115  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of PSMN2R9-25YLC,115 MOSFETs across the USA, India, Europe, Australia, and various other global locations. PSMN2R9-25YLC,115 MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. PSMN2R9-25YLC,115
Manufacturer: Nexperia
Category: MOSFETs
Description: MOSFET N-Ch 25V 3.15 mOhms
Datasheet: PSMN2R9-25YLC,115 Datasheet (PDF)
Price (USD)
1: USD 1.275 ea
Line Total: USD 1.27 
Availability : 0
  
QtyUnit Price
1$ 1.275
1000$ 0.7238
1500$ 0.3377
3000$ 0.3014
9000$ 0.2882

Availability 0
Ship by Fri. 21 Nov to Thu. 27 Nov
MOQ : 1500
Multiples : 1500
QtyUnit Price
1500$ 0.4475
3000$ 0.4431
6000$ 0.4386
9000$ 0.4343
12000$ 0.4298
15000$ 0.4256
24000$ 0.4213
30000$ 0.4171
75000$ 0.413


Availability 0
Ship by Fri. 21 Nov to Thu. 27 Nov
MOQ : 1500
Multiples : 1500
QtyUnit Price
1500$ 0.7355
3000$ 0.6427
7500$ 0.5984
10500$ 0.5763


Availability 0
Ship by Fri. 21 Nov to Thu. 27 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.585
10$ 0.5791
125$ 0.5324
750$ 0.4329


Availability 0
Ship by Wed. 19 Nov to Fri. 21 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.275
1000$ 0.7238
1500$ 0.3377
3000$ 0.3014
9000$ 0.2882


Availability 0
Ship by Fri. 21 Nov to Thu. 27 Nov
MOQ : 26
Multiples : 1
QtyUnit Price
26$ 0.5351


Availability 0
Ship by Wed. 19 Nov to Fri. 21 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.1927
5$ 1.0747
20$ 0.8046
25$ 0.8033
54$ 0.7599

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Brand
Factory Pack Quantity :
Configuration
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the PSMN2R9-25YLC,115 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PSMN2R9-25YLC,115 and other electronic components in the MOSFETs category and beyond.

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PSMN2R9-25YLC N-channel 25 V 3.15 m logic level MOSFET in LFPAK using NextPower technology Rev. 1 2 May 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High reliability Power SO8 package, Optimised for 4.5V Gate drive utilising qualified to 175C NextPower Superjunction technology Low parasitic inductance and Ultra low QG, QGD and QOSS for high resistance system efficiencies at low and high loads 1.3 Applications DC-to-DC converters Power OR-ing Lithium-ion battery protection Server power supplies Load switching Sync rectifier 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source 25 C T 175 C - - 25 V DS j voltage 1 I drain current T =25 C V =10V --100 A D mb GS see Figure 1 total power T =25 C see Figure 2 --92 W P tot mb dissipation T junction -55 - 175 C j temperaturePSMN2R9-25YLC Nexperia N-channel 25 V 3.15 m logic level MOSFET in LFPAK using Table 1. Quick reference data continued Symbol Parameter Conditions Min Typ Max Unit Static characteristics R drain-source V = 4.5 V I =25A - 3.45 4.1 m DSon GS D on-state T =25C j resistance see Figure 12 V =10V I =25A - 2.65 3.15 m GS D T =25C j see Figure 12 Dynamic characteristics Q gate-drain V = 4.5 V I =25A -4.4 -nC GD GS D charge V =12V DS see Figure 14 see Figure 15 Q total gate -16 -nC G(tot) charge 1 Continuous current is limited by package. 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1S source mb D 2S source 3S source G 4 G gate mbb076 S mb D mounting base 1234 connected to drain SOT669 (LFPAK Power-SO8) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN2R9-25YLC LFPAK plastic single-ended surface-mounted package 4 leads SOT669 Power-SO8 4. Marking Table 4. Marking codes 1 Type number Marking code PSMN2R9-25YLC 2C925L 1 % = placeholder for manufacturing site code. PSMN2R9-25YLC All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 1 2 May 2011 2 of 15

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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