E3L2DC4 Omron

E3L2DC4 electronic component of OmronImages are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of E3L2DC4 Photoelectric Sensors across the USA, India, Europe, Australia, and various other global locations. E3L2DC4 Photoelectric Sensors are a product manufactured by Omron. We provide cost-effective solutions for Photoelectric Sensors, ensuring timely deliveries around the world.

Part No.E3L2DC4
Manufacturer:Omron
Category:Photoelectric Sensors
Description:Photoelectric Sensors RECEIVER ONLY FOR E3 L-2RC4
Datasheet:E3L2DC4 Datasheet (PDF)
Shipping Charges:Click here for details
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Price (USD)
  
1: USD 361.8008 ea
Line Total: USD 361.8 
Availability : 0
  
QtyUnit Price
1$ 361.8008
  

Availability0
Ship by Tue. 23 Jun to Mon. 29 Jun
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 361.8008

   
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We are delighted to provide the E3L2DC4 from our Photoelectric Sensors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the E3L2DC4 and other electronic components in the Photoelectric Sensors category and beyond.

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Discontinued Mar. 30, 2009; Use E3Z-L Laser E3L E3L Laser Photoelectric Sensor E3L Prewired DC Sensor Provides Long- Distance Sensing of Objects as Small as 0.1 mm  Detect small objects over longer sensing distances with highly accurate positioning  Attachable apertures allow detection down to 0.1 mm diameter  Alarm output signals deteriorating detec- tion conditions due to improper alignment or dust contamination  Class I (FDA/IEC) laser product E3L-50, requires no additional protective equip- ment  Visible spot through-beam version aids in critical alignment applications Ordering Information  SENSORS Method of detection Through-beam Diffuse reflective Sensing distance 10 m (32.8 ft) 2 m (6.56 ft) 20 to 50 cm (7.9 to 19.7 in) Light source Visible red Infrared Infrared Laser class Class II Class I Class I Part number NPN output E3L-2RC4 E3L-2E4-50 E3L-DS50E4-50 PNP output E3L-2B4-50  REPLACEMENT PARTS Description Part number Mounting bracket For through-beam type; supplied with E3L-24- 50, E3L-2RC4 E39-L6 For diffuse reflective type; supplied with E3L-DS50E4-50 E39-L5 Sensitivity adjuster knob E39-G1 Aperture with 0.85 mm dia. opening E39-S56 Apertures for through-beam types Aperture with 0.10 mm dia. opening E39-S55 2Discontinued Mar. 30, 2009; Use E3Z-L Laser E3L E3L Specifications Part number E3L-2RC4 (See Note.) E3L-24-50 E3L-DS50E4-50 Method of detection Through-beam type Diffuse reflective Supply voltage 12 to 24 VDC, 10% max. ripple peak-to-peak Current consumption 50 mA max. 40 mA max. Sensing distance 10 m (32.8 ft) with no 2 m (6.56 ft) with 0.85 mm 20 to 50 cm (7.9 to 19.7 in) aperture; 9 m (29.52 ft) with dia. aperture; 20 cm (7.9 in) with 2 x 2 mm (0.09 x 0.09 in) 3 mm aperture; 6 m (19.68 ft) with 0.1 mm dia. aperture white mat paper with 2 mm aperture; 3 m (9.84 ft) with 1 mm aperture; 2 m (6.56 ft) with 0.85 mm aperture; 1 m (3.28 ft) with 0.5 mm aperture; 30 cm (11.81 in) with 0.1 mm aperture Light source Visible red, pulse modulated Infrared, pulse modulated laser diode (=780 nm) 25 W laser diode (=670 nm) max., Class I FDA/IEC 480 W max., Class II FDA/IEC Detectable object type 4 mm (0.16 in) dia. object 0.5 mm (0.02 in) dia. object Opaque, translucent objects minimum without aperture; minimum with 0.85 mm dia. 2 x 2 mm With aperture - object aperture 0.1 mm (0.003 in) minimum is same as dia. object minimum with aperture size 0.10 mm dia. aperture Diameter of projected spot With 4 mm dia. emitter, no aperture, at a distance of With 4 mm dia. emitter, at a 2 m (6.56 ft), the incident light is 20 mm (0.79 in) in diameter distance of 50 cm (19.7 in) from the emitter, the incident light is 2 mm (0.08 in) in dia. Directional angle Emitter: 2 max., Receiver: 20 max. Operation mode Light-ON/Dark-ON, wire selectable Light-ON: + red, - black; Dark-ON: - red, + black Sensitivity adjustment Adjustable Mutual interference protection Standard level Control DC Type NPN type, open collector NPN type, constant current source (E3L-E4-50) output solid- PNP type, open collector (E3L-2B4-50) state Max. load NPN type: 100 mA max. NPN type: Load (relay, sink) logic: 80 mA max. Voltage (source) logic: 1.5 to 3 mA PNP type: Load (relay, source) logic: 80 mA max. Response time 1 ms max. (both ON and OFF) 3 ms max. (both ON and OFF) Alarm DC Type NPN (E3L-E4-50); PNP (E3L-2B4-50) output solid- Max. load 50 mA, 24 VDC state Residual voltage 1 V Response time Output turns ON after 100 ms delay when light receiving signal level is within unstabe zone. Circuit Output short- Provided protection circuit DC power supply Provided reverse polarity Indicators Light Incident (red LED), Stable Operation (green LED) Materials Lens Plastic, PMMA Case Diecast zinc (This table continues on the next page) Note: In consideration of vibration and other environmental and mounting conditions, the sensing distance values for the E3L-2RC4 are very conservative. If these conditions can be minimized, longer sensing distances are possible. Please see excess gain and operating range curves for more accurate sensing ranges. 3

Tariff Desc

8541.40.00 54 No .Light emitting diodes (LED), LED displays, optocouplers, photosensitive transistors and diodes, infra-red and fibre optic emitters and detectors Free

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS; LIGHT-EMITTING DIODES (LED); MOUNTED PIEZO-ELECTRIC CRYSTALS:
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