EESB5MW12

EE-SB5M/SB5MC/SB5V/SB5VC/SB5V-E Photomicrosensor with 80-mA Switching Capacity that can be Built into Equipment Built-in amplifier Models available with 5- to 12-VDC and 5- to 15-VDC input CMOS- and TTL-compatible Model with easy adjustment with an external sensitivity adjuster (EE-SB5V) Special connectors (EE-1001/1006) are available 19-mm sensing distance (EE-SB5V-E) Convert to PNP output with EE-2002 conversion connector Ordering Information Appearance Sensing method Sensing distance Output configuration Weight Part number Reflective 5mm Approx. 3.0 gg Light-ON EE-SB5M Dark-ON EE-SB5MC Light-ON EE-SB5V Dark-ON EE-SB5VC 19 mm Light-ON Approx. 2.8 g EE-SB5V-E Specifications RATINGS Item Reflective EE-SB5M EE-SB5MC EE-SB5V(-E) EE-SB5VC Supply voltage 5to12VDC 10%, ripple (p-p): 10% max. 5to15VDC 10%, ripple (p-p): 10% max. Current consumption 36 mA max. 48 mA max. (DC current: I =25mA) F Maximum forward direct current (I ) 30 mA max. F Forward voltage (V ) 1.5 V max. (I =30mA) F F Reverse voltage (V ) 4V max. R Standard reference object White paper with reflection factor of 90% (standard sensing object: 15 x 15 mm) Differential distance 0.1 mm (This table continues on the next page.)EE-SB5M/SB5MC/SB5V/SB5VC/SB5V-E EE-SB5M/SB5MC/SB5V/SB5VC/SB5V-E Specifications Table -- continued from previous page Item Reflective EE-SB5M EE-SB5MC EE-SB5V(-E) EE-SB5VC Control output At 5 to 24 VDC: 80-mA load current (I ) with a residual voltage of 0.8 V max. C When driving TTL: 40-mA load current (I ) with a residual voltage of 0.4 V max. C Output Transistor on output stage OFF ON OFF ON configuration without detecting object Transistor on output stage ON OFF ON OFF with detecting object Response frequency* 50 Hz Connecting method EE-1001/1006 Connectors soldering terminals Light source GaAs infrared LED with a peak wavelength of 940 nm Receiver Si photo-transistor with a sensing wavelength of 850 nm max. *The response frequency was measured by detecting the following disks rotating. Disk 200 mm dia. 5mm 15 mm 15 mm 15 mm CHARACTERISTICS Operating -25Cto55C (-13F to 131F) Ambient temperature Storage -30Cto80C (-22F to 176F) Ambient humidityy Operating 45% to 85% Storage 35% to 95% Vibration resistance Destruction: 20 to 2,000 Hz (with a peak acceleration of 20Gs), 1.5-mm double amplitude for 4 min each in X, Y, and Z directions 2 Shock resistance Destruction: 500 m/s for 3 times each in X, Y, and Z directions Soldering heat resistance 2605C (See Note.) when the portion between the tip of the terminals and the position 1.5 mm from the terminal base is dipped into the solder for 101 seconds Note: This conforms to MIL-STD-750-2031-1.