EE-SG3

Photomicrosensor (Transmissive) EE-SG3/EE-SG3-B Be sure to read Precautions on page 25. Dimensions Features Dust-proof model. Note: All units are in millimeters unless otherwise indicated. Solder terminal model (EE-SG3). PCB terminal model (EE-SG3-B). Absolute Maximum Ratings (Ta = 25C) 13 Two, 3.20.2 190.1 dia. holes 25.40.2 Item Symbol Rated value 3.60.2 Emitter Forward current I 50 mA F (see note 1) Optical axis Pulse forward cur- I 1 A FP rent (see note 2) Reverse voltage V 4 V R 1.2 Detector CollectorEmitter V 30 V CEO Four, 0.5 Four, 0.25 voltage 2.540.3 0.8 7.620.3 0.6 EmitterCollector V --- Four, 1.5 ECO Cross section AA 2.54 voltage Collector current I 20 mA C Cross section AA Collector dissipa- P 100 mW C tion (see note 1) Internal Circuit Ambient tem- Operating Topr 25C to 85C perature Storage Tstg 30C to 100C K C Soldering temperature Tsol 260C Unless otherwise specified, the tolerances are as shown below. (see note 3) A E Dimensions Tolerance Note: 1. Refer to the temperature rating chart if the ambient temper- ature exceeds 25C. 3 mm max. 0.3 2. The pulse width is 10 s maximum with a frequency of Terminal No. Name 3 < mm 6 0.375 100 Hz. A Anode 6 < mm 10 0.45 3. Complete soldering within 10 seconds. K Cathode 10 < mm 18 0.55 C Collector 18 < mm 30 0.65 E Emitter Electrical and Optical Characteristics (Ta = 25C) Item Symbol Value Condition Emitter Forward voltage V 1.2 V typ., 1.5 V max. I = 30 mA F F Reverse current I 0.01 A typ., 10 A max. V = 4 V R R Peak emission wavelength 940 nm typ. I = 20 mA P F Detector Light current I 2 mA min., 40 mA max. I = 15 mA, V = 10 V L F CE Dark current I 2 nA typ., 200 nA max. V = 10 V, 0 lx D CE Leakage current I --- --- LEAK CollectorEmitter saturated volt- V (sat) 0.1 V typ., 0.4 V max. I = 30 mA, I = 1 mA CE F L age Peak spectral sensitivity wave- 850 nm typ. V = 10 V P CE length Rising time tr 4 s typ. V = 5 V, R = 100 , I = 5 mA CC L L Falling time tf 4 s typ. V = 5 V, R = 100 , I = 5 mA CC L L 106 EE-SG3/EE-SG3-B Photomicrosensor (Transmissive) Engineering Data Forward Current vs. Collector Forward Current vs. Forward Light Current vs. Forward Current Dissipation Temperature Rating Voltage Characteristics (Typical) Characteristics (Typical) Ta = 25C V = 10 V CE IF Ta = 30C PC Ta = 25C Ta = 70C Ambient temperature Ta (C) Forward voltage V (V) Forward current I (mA) F F Light Current vs. CollectorEmitter Relative Light Current vs. Ambi- Dark Current vs. Ambient Voltage Characteristics (Typical) ent Temperature Characteristics Temperature Characteristics (Typical) (Typical) Ta = 25C I = 20 mA F V = 10 V CE V = 5 V CE 0 lx I = 25 mA F I = 20 mA F I = 15 mA F I = 10 mA F I = 5 mA F CollectorEmitter voltage V (V) CE Ambient temperature Ta (C) Ambient temperature Ta (C) Response Time vs. Load Resist- Sensing Position Characteristics Sensing Position Characteristics ance Characteristics (Typical) (Typical) (Typical) 120 V = 5 V IF = 20 mA CC I = 20 mA F V = 10 V Ta = 25C CE V = 10 V CE Ta = 25C 100 Ta = 25C (Center of optical axis) 80 d 60 40 20 0 2.0 1.5 1.0 0.5 0 0.5 1.0 1.5 2.0 Distance d (mm) Load resistance R (k) L Distance d (mm) Response Time Measurement Circuit Input 90 % Output 10 % Input Output EE-SG3/EE-SG3-B Photomicrosensor (Transmissive) 107 Forward current I (mA) F Response time tr, tf (s) Light current I (mA) L Collector dissipation P (mW) C Relative light current I (%) L Forward current I (mA) Relative light current I (%) F L Dark current I (nA) D Light current I (mA) L Relative light current I (%) L (Center of optical axis)