Photomicrosensor (Transmissive) EE-SX1088 Be sure to read Precautions on page 25. Dimensions Features General-purpose model with a 3.4-mm-wide slot. Note: All units are in millimeters unless otherwise indicated. Mounts to PCBs or connects to connectors. 250.2 High resolution with a 0.5-mm-wide aperture. 190.15 Two, R1 OMRONs XK8-series Connectors can be connected without sol- dering. Contact your OMRON representative for information on 50.2 60.2 obtaining XK8-series Connectors. Two, C2 Four, C0.3 Two, 3.20.2 dia. holes Absolute Maximum Ratings (Ta = 25C) 0.50.1 Item Symbol Rated value 0.50.1 Emitter Forward current I 50 mA F 6.50.1 (Optical axis) (see note 1) 100.2 Pulse forward cur- I 1 A FP 8.40.1 7.20.2 rent (see note 2) 2.50.1 Four, 0.5 Reverse voltage V 4 V R 30.4 Four, 0.25 Detector CollectorEmitter V 30 V CEO voltage Cross section BB Cross section AA EmitterCollector V --- ECO voltage Collector current I 20 mA C Collector dissipa- P 100 mW C Internal Circuit tion (see note 1) Ambient tem- Operating Topr 25C to 85C K C Unless otherwise specified, the perature Storage Tstg 30C to tolerances are as shown below. 100C Soldering temperature Tsol 260C A E Dimensions Tolerance (see note 3) 3 mm max. 0.3 Note: 1. Refer to the temperature rating chart if the ambient temper- Terminal No. Name 3 < mm 6 0.375 ature exceeds 25C. A Anode 6 < mm 10 0.45 2. The pulse width is 10 s maximum with a frequency of K Cathode 100 Hz. 10 < mm 18 0.55 C Collector 3. Complete soldering within 10 seconds. 18 < mm 30 0.65 E Emitter Electrical and Optical Characteristics (Ta = 25C) Item Symbol Value Condition Emitter Forward voltage V 1.2 V typ., 1.5 V max. I = 30 mA F F Reverse current I 0.01 A typ., 10 A max. V = 4 V R R Peak emission wavelength 940 nm typ. I = 20 mA P F Detector Light current I 0.5 mA min., 14 mA max. I = 20 mA, V = 10 V L F CE Dark current I 2 nA typ., 200 nA max. V = 10 V, 0 lx D CE Leakage current I --- --- LEAK CollectorEmitter saturated volt- V (sat) 0.15 V typ., 0.4 V max. I = 20 mA, I = 0.1 mA CE F L age Peak spectral sensitivity wave- 850 nm typ. V = 10 V P CE length Rising time tr 4 s typ. V = 5 V, R = 100 , I = 5 mA CC L L Falling time tf 4 s typ. V = 5 V, R = 100 , I = 5 mA CC L L 52 EE-SX1088 Photomicrosensor (Transmissive) Engineering Data Forward Current vs. Collector Forward Current vs. Forward Light Current vs. Forward Current Dissipation Temperature Rating Voltage Characteristics (Typical) Characteristics (Typical) Ta = 25C IF V = 10 V CE Ta = 30C PC Ta = 25C Ta = 70C Forward voltage V (V) F Forward current I (mA) Ambient temperature Ta (C) F Light Current vs. CollectorEmitter Relative Light Current vs. Ambi- Dark Current vs. Ambient Voltage Characteristics (Typical) ent Temperature Characteristics Temperature Characteristics (Typical) (Typical) I = 20 mA F Ta = 25C V = 10 V CE V = 5 V CE 0 lx I = 50 mA F I = 40 mA F I = 30 mA F I = 20 mA F I = 10 mA F CollectorEmitter voltage V (V) CE Ambient temperature Ta (C) Ambient temperature Ta (C) Response Time vs. Load Resist- Sensing Position Characteristics Sensing Position Characteristics ance Characteristics (Typical) (Typical) (Typical) 120 V = 5 V CC I = 20 mA F IF = 20 mA Ta = 25C V = 10 V CE V = 10 V CE 100 Ta = 25C Ta = 25C (Center of optical axis) 80 d 60 40 20 0 2.0 1.5 1.0 0.5 0 0.5 1.0 1.5 2.0 Distance d (mm) Load resistance R (k) L Distance d (mm) Response Time Measurement Circuit Input 90 % Output 10 % Input Output EE-SX1088 Photomicrosensor (Transmissive) 53 Response time tr, tf (s) Forward current I (mA) F Light current I (mA) L Collector dissipation P (mW) C Forward current I (mA) F Relative light current I (%) Relative light current I (%) L L Dark current I (nA) D Relative light current I (%) L Light current I (mA) L (Center of optical axis)