Photomicrosensor (Transmissive) EE-SX298 Dimensions Features General-purpose model with a 3-mm-wide slot. Note: All units are in millimeters unless otherwise indicated. PCB mounting type. 12.20.3 High resolution with a 0.5-mm-wide aperture. With a Photo-Darlington transistor as a detector element. Absolute Maximum Ratings (Ta = 25C) 50.1 Four, C0.3 Two, C10.3 Item Symbol Rated value 0.50.1 Emitter Forward current I 50 mA (see note 1) F Optical axis Pulse forward current I 1 A (see note 2) FP 100.2 8.50.1 6.50.1 Reverse voltage V 4 V R Detector CollectorEmitter V 35 V CEO 6.20.5 voltage Four, EmitterCollector V --- ECO Four, 0.25+0.1 0.50.1 voltage 2.50.1 9.20.3 Collector current I 20 mA C Cross section BB Cross section AA Collector dissipation P 100 mW (see note 1) C 25 C to 85 C Ambient Operating T opr temperature Internal Circuit Storage T 30 C to 100 C stg K C Soldering temperature T 260 C (see note 3) sol Note: 1. Refer to the temperature rating chart if the ambient temper- A E ature exceeds 25 C. 2. The pulse width is 10 s maximum with a frequency of 100 Hz. 3. Complete soldering within 10 seconds. Terminal No. Name A Anode Ordering Information K Cathode C Collector Unless otherwise specified, Description Model the tolerances are 0.2 mm. E Emitter Photomicrosensor (transmissive) EE-SX298 Electrical and Optical Characteristics (Ta = 25 C) Item Symbol Value Condition Emitter Forward voltage V 1.2 V typ., 1.4 V max. I = 20 mA F F Reverse current I 0.01 A typ., 10 A max. V = 4 V R R Peak emission wavelength 940 nm typ. I = 20 mA P F Detector Light current I 0.5 mA min., 20 mA max. I = 1 mA, V = 2 V L F CE Dark current I 2 nA typ., 1,000 nA max. V = 10 V, 0 lx D CE Leakage current I --- --- LEAK CollectorEmitter saturated voltage V 0.75 V typ., 1.0 V max. I = 2 mA, I = 0.5 mA CE F L (sat) Peak spectral sensitivity wavelength 780 nm typ. V = 5 V P CE Rising time tr 70 s typ. V = 5 V, R = 100 , I = 10 mA CC L L Falling time tf 70 s typ. V = 5 V, R = 100 , I = 10 mA CC L L Photomicrosensor (Transmissive) EE-SX298 177 Engineering Data Forward Current vs. Collector Forward Current vs. Forward Light Current vs. Forward Current Dissipation Temperature Rating Voltage Characteristics (Typical) Characteristics (Typical) Ta = 25C V = 2 V CE IF Ta = 30C PC Ta = 25C Ta = 70C Forward voltage V (V) F Forward current I (mA) Ambient temperature Ta (C) F Light Current vs. CollectorEmitter Dark Current vs. Ambient Relative Light Current vs. Voltage Characteristics (Typical) Temperature Characteristics Ambient Temperature Character- (Typical) istics (Typical) V = 10 V Ta = 25C CE I = 1 mA F 0 lx V = 2 V CE I = 3.5 mA F I = 3 mA F I = 2.5 mA F I = 2 mA F I = 1.5 mA F I = 1 mA F CollectorEmitter voltage V (V) CE Ambient temperature Ta (C) Ambient temperature Ta (C) Sensing Position Characteristics Sensing Position Characteristics Response Time vs. Load Resis- (Typical) (Typical) tance Characteristics (Typical) 120 I = 20 mA F V = 5 V I = 20 mA CC F V = 10 V CE V = 10 V Ta = 25C CE Ta = 25C Ta = 25C 100 (Center of optical axis) 80 d 60 40 20 0 2.0 1.5 1.0 0.5 0 0.5 1.0 1.5 2.0 Load resistance R (k) L Distance d (mm) Distance d (mm) Response Time Measurement Circuit Input 90 % Output 10 % Input Output 178 Photomicrosensor (Transmissive) EE-SX298 Response time tr, tf (s) Light current I (mA) L Forward current I (mA) F Collector dissipation P (mW) C Relative light current I (%) L Relative light current I (%) L Forward current I (mA) F Dark current I (nA) Relative light current I (%) D L Light current I (mA) L (Center of optical axis)