EE-SX129 Omron

Photomicrosensor (Transmissive) EE-SX129 Be sure to read Precautions on page 25. Dimensions Features High-resolution model with a 0.2-mm-wide sensing aperture. Note: All units are in millimeters unless otherwise indicated. PCB mounting type. 13 +0.5 8 1 0 5 Absolute Maximum Ratings (Ta = 25C) 6 Item Symbol Rated value 0.5 min. Emitter Forward current I 50 mA F 5 (see note 1) R2.5 2.5 0.2 0.2 3 A B Part B Pulse forward cur- I 1 A FP 2.5 30.3 rent (see note 2) 5 2 8 Optical axis Reverse voltage V 4 V R 2 +0.2 2.1 0 dia. holes A Detector CollectorEmitter V 30 V CEO voltage 13.42 EmitterCollector V --- ECO voltage 0.25 Collector current I 20 mA C 0.5 9.20.3 0.8 Collector dissipa- P 100 mW C 1.940.2 tion (see note 1) Cross section AA Ambient tem- Operating Topr 25C to 85C E A C K perature Storage Tstg 40C to Internal Circuit 100C Soldering temperature Tsol 260C E A Unless otherwise specified, the (see note 3) tolerances are as shown below. Note: 1. Refer to the temperature rating chart if the ambient temper- Dimensions Tolerance C K ature exceeds 25C. 3 mm max. 0.3 2. The pulse width is 10 s maximum with a frequency of Terminal No. Name 100 Hz. 3 < mm 6 0.375 3. Complete soldering within 10 seconds. A Anode 6 < mm 10 0.45 K Cathode 10 < mm 18 0.55 C Collector 18 < mm 30 0.65 E Emitter Electrical and Optical Characteristics (Ta = 25C) Item Symbol Value Condition Emitter Forward voltage V 1.2 V typ., 1.5 V max. I = 30 mA F F Reverse current I 0.01 A typ., 10 A max. V = 4 V R R Peak emission wavelength 920 nm typ. I = 20 mA P F Detector Light current I 0.2 mA min. I = 20 mA, V = 10 V L F CE Dark current I 2 nA typ., 200 nA max. V = 10 V, 0 lx D CE Leakage current I --- --- LEAK CollectorEmitter saturated volt- V (sat) --- --- CE age Peak spectral sensitivity wave- 850 nm typ. V = 10 V P CE length Rising time tr 4 s typ. V = 5 V, R = 100 , I = 5 mA CC L L Falling time tf 4 s typ. V = 5 V, R = 100 , I = 5 mA CC L L 88 EE-SX129 Photomicrosensor (Transmissive) K C A E Engineering Data Forward Current vs. Collector Forward Current vs. Forward Light Current vs. Forward Current Dissipation Temperature Rating Voltage Characteristics (Typical) Characteristics (Typical) Ta = 25C V = 10 V CE IF Ta = 30C PC Ta = 25C Ta = 70C Forward current I (mA) F Forward voltage V (V) Ambient temperature Ta (C) F Light Current vs. CollectorEmitter Relative Light Current vs. Ambi- Dark Current vs. Ambient Voltage Characteristics (Typical) ent Temperature Characteristics Temperature Characteristics (Typical) (Typical) I = 20 mA Ta = 25C F V = 10 V CE V = 5 V CE 0 lx I = 50 mA F I = 40 mA F I = 30 mA F I = 20 mA F I = 10 mA F CollectorEmitter voltage V (V) CE Ambient temperature Ta (C) Ambient temperature Ta (C) Response Time vs. Load Resist- Sensing Position Characteristics Sensing Position Characteristics ance Characteristics (Typical) (Typical) (Typical) 120 I = 20 mA F V = 5 V CC I = 20 mA V = 10 V F CE Ta = 25C V = 10 V Ta = 25C CE Ta = 25C 100 (Center of optical axis) 80 d 60 40 20 0 2.0 1.5 1.0 0.5 0 0.5 1.0 1.5 2.0 -0.2 -0.1 0 0.1 0.2 0.3 0.4 Load resistance R (k) Distance d (mm) L Distance d (mm) Response Time Measurement Circuit Input 90 % Output 10 % Input Vcc Output EE-SX129 Photomicrosensor (Transmissive) 89 Response time tr, tf (s) Light current I (mA) L Forward current I (mA) F Collector dissipation P (mW) C Relative light current I (%) Relative light current I (%) L L Forward current I (mA) F Dark current I (nA) D Relative light current I (%) Light current I (mA) L L (Center of optical axis)