X-On Electronics has gained recognition as a prominent supplier of 15C01M-TL-E Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 15C01M-TL-E Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

15C01M-TL-E ON Semiconductor

15C01M-TL-E electronic component of ON Semiconductor
15C01M-TL-E ON Semiconductor
15C01M-TL-E Bipolar Transistors - BJT
15C01M-TL-E  Semiconductors

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See Product Specifications
Part No. 15C01M-TL-E
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor NPN 15 V 700 mA 330MHz 300 mW Surface Mount SC-70 / MCP3
Datasheet: 15C01M-TL-E Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5416: USD 0.0866 ea
Line Total: USD 469.03 
Availability - 5650
Ship by Thu. 17 Jul to Wed. 23 Jul
MOQ: 5416  Multiples: 1
Pack Size: 1
Availability Price Quantity
3664
Ship by Thu. 17 Jul to Wed. 23 Jul
MOQ : 669
Multiples : 1
669 : USD 0.3892
1127 : USD 0.2309
1713 : USD 0.1518
2228 : USD 0.1167
2476 : USD 0.105
3000 : USD 0.0896
6000 : USD 0.0811
9000 : USD 0.0736
24000 : USD 0.0711

5650
Ship by Thu. 17 Jul to Wed. 23 Jul
MOQ : 5416
Multiples : 1
5416 : USD 0.0866
10000 : USD 0.0772
100000 : USD 0.0648

3664
Ship by Thu. 17 Jul to Wed. 23 Jul
MOQ : 669
Multiples : 1
669 : USD 0.3892

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 15C01M-TL-E from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 15C01M-TL-E and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Ordering number : EN7505A 15C01M Bipolar Transistor Ta=75C --25C 25C 15C01M Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current I V =15V, I =0A 0.1 A CBO CB E Emitter Cutoff Current I V =4V, I =0A 0.1 A EBO EB C DC Current Gain h V =2V, I =10mA 300 800 FE CE C Gain-Bandwidth Product f V =2V, I =50mA 330 MHz T CE C Output Capacitance Cob V =10V, f=1MHz 3.2 pF CB Collector-to-Emitter Saturation Voltage V (sat) I =200mA, I =10mA 150 300 mV CE C B Base-to-Emitter Saturation Voltage V (sat) I =200mA, I =10mA 0.9 1.2 V BE C B Collector-to-Base Breakdown Voltage V I =10A, I =0A 20 V (BR)CBO C E Collector-to-Emitter Breakdown Voltage V I =1mA, R = 15 V (BR)CEO C BE Emitter-to-Base Breakdown Voltage V I =10A, I =0A 5 V (BR)EBO E C Turn-On Time t 30 ns on Storage Time t See speci ed Test Circuit. 77 ns stg Fall Time t 40 ns f Ordering Information Device Package Shipping memo 15C01M-TL-E MCP 3,000pcs./reel Pb Free I -- V I -- V C CE C BE 200 800 V =2V CE 180 700 160 600 140 500 120 100 400 0.3mA 80 300 0.2mA 60 200 0.1mA 40 100 20 I =0mA B 0 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 0.2 0.4 0.6 0.8 1.0 1.2 Collector-to-Emitter Voltage, V -- V IT05490 Base-to-Emitter Voltage, V -- V IT05491 CE BE h -- I V (sat) -- I FE C CE C 1000 1000 I / I =20 V =2V C B CE 7 7 5 5 3 3 2 2 100 7 100 5 7 3 2 5 3 10 23 5 7 23 5 7 23 5 7 23 5 7 23 5 7 23 5 7 1.0 10 100 1000 1.0 10 100 1000 Collector Current, I -- mA Collector Current, I -- mA IT05492 IT05493 C C No.7505-2/6 0.5mA 0.4mA 0.7mA 0.6mA 0.8mA 25C Ta=75C --25C 0.9mA Ta=75C 25C --25C 1.0mA DC Current Gain, h Collector Current, I -- mA FE C Collector-to-Emitter Saturation Voltage, V (sat) -- mV Collector Current, I -- mA CE C

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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