Product Information

1PMT12AT1G

1PMT12AT1G electronic component of ON Semiconductor

Datasheet
ON Semiconductor TVS Diodes - Transient Voltage Suppressors 12V 200W Powermite Unidirectional

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - Global Stock

MOQ : 1
Multiples : 1

Stock Image

1PMT12AT1G
ON Semiconductor

1 : USD 0.6186
N/A

Obsolete
0 - Global Stock

MOQ : 1
Multiples : 1

Stock Image

1PMT12AT1G
ON Semiconductor

1 : USD 1.4782
10 : USD 0.7028
100 : USD 0.3825
500 : USD 0.3069
1000 : USD 0.2449
3000 : USD 0.2257
6000 : USD 0.2144
9000 : USD 0.2076
N/A

Obsolete
0 - Global Stock

MOQ : 3000
Multiples : 3000

Stock Image

1PMT12AT1G
ON Semiconductor

3000 : USD 0.2168
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Series
Product Type
Polarity
Termination Style
Breakdown Voltage
Working Voltage
Clamping Voltage
Package / Case
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Peak Surge Current
Height
Length
Operating Temperature Range
Width
Brand
Mounting Style
Pd - Power Dissipation
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Subcategory
Taric
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TVS Diodes Surface Mount > 200W > 1PMT5.0AT1G/T3G Series Pb 1PMT5.0AT1G/T3G Series Description The 1PMT5.0AT1G/T3G Series is designed to protect voltage sensitive components from high voltage, high energy transients. Excellent clamping capability, high surge capability, low Zener impedance and fast response time. The advanced packaging technique provides for a highly efficient micro miniature, space saving surface mount with its unique heatsink design. It has the same thermal performance as the SMA while being 50% smaller in footprint area, and delivering one of the lowest height profiles (1.1 mm) in the industry. Because of its small size, it is ideal for use in cellular phones, portable devices, business machines, power supplies and many other industrial/consumer applications. Features Maximum Ratings and Thermal Characteristics Standoff Voltage: 5.0 V 58 V Rating Symbol Value Unit Peak Power 200 W 1 ms (1PMT5.0A 1PMT36A) Maximum Ppk Dissipation, (PW10/1000 P 200 W PK 175 W 1 ms (1PMT40A 1PMT58A) s) (Note 1) (1PMT5.0A 1PMT36A) Maximum Clamp Voltage Peak Pulse Current Maximum Ppk Dissipation, (PW10/1000 Low Leakage P 175 W PK s) (Note 1) (1PMT40A 1PMT58A) Response Time is Typically < 1 ns ESD Rating of Class 3 Maximum Ppk Dissipation, (PW8/20 s) P PK 1000 W (> 16 kV) per Human Body Model (Note 1) Low Profile Maximum Height of 1.1 mm DC Power Dissipation TA = 25C (Note mW 500 Integral Heatsink/Locking Tabs 2) Derate above 25C T T 4.0 mW/C J, stg Thermal Resistance, Junctionto 248 Full Metallic Bottom Eliminates Flux Entrapment C Ambient Small Footprint Footprint Area of 8.45 mm2 Thermal Resistance, Junction R 35 C/W Lead Orientation in Tape: Cathode (Short) Lead to 8Janode toLead (Anode) Sprocket Holes Bi-directional W 3.2 Maximum DC Power Dissipation (Note 3) P Cathode Indicated by Polarity Band D Thermal Resistance, JunctiontoTab R C/W 8Jcathode 23 These Devices are PbFree and are RoHS Compliant (Cathode) Functional Diagram Operating and Storage Temperature 55 to T , T C J stg Range +150 Cathode Anode Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Nonrepetitive current pulse at TA = 25C. 2. Mounted with recommended minimum pad size, DC board FR4. Additional Information 3. At Tab (Cathode) temperature, Ttab = 75C Uni-directional Samples Datasheet Resources 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 09/14/17TVS Diodes Surface Mount > 200W > 1PMT5.0AT1G/T3G Series I-V Curve Characteristics (T = 25C unless otherwise noted) A Symbol Parameter I I Maximum Reverse Peak Pulse Current I PP V Clamping Voltage I C PP V Working Peak Reverse Voltage RWM I Maximum Reverse Leakage Current V R RWM V I V Breakdown Voltage I I BR T I Test Current T I Forward Current F I V Forward Voltage I F F Ratings and Characteristic Curves Figure 1. Pulse Rating Curve Figure 2. 10 X 1000 s Pulse Waveform 10,000 PULSE WIDTH (t ) IS DEFINED P AS THAT POINT WHERE THE PEAK t r CURRENT DECAYS TO 50% OF I . RSM 100 1000 PEAK VALUE - I RSM t 10 s I RSM HALF VALUE - 2 50 100 t P 0 10 1.01 0 100 1000 10,000 01 23 4 t, TIME (ms) t , PULSE WIDTH ( s) P Figure 3. 8 X 20 s Pulse Waveform Figure 4. Pulse Derating Curve 100 160 t PEAK VALUE I 8 s r RSM 90 140 PULSE WIDTH (t ) IS DEFINED P 80 AS THAT POINT WHERE THE 120 70 PEAK CURRENT DECAY = 8 s 100 60 HALF VALUE I /2 20 s RSM 50 80 40 60 30 t P 40 20 20 10 0 0 02 55 07 51 00 125 150 02 04 06 08 0 T , AMBIENT TEMPERATURE C( ) A t, TIME ( s) 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 09/14/17 P , PEAK POWER (WATTS) P % OF PEAK PULSE CURRENT PEAK PULSE DERATING IN % OF VALUE (%) PEAK POWER OR CURRENT T = 25C A

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
Aptina / ON Semiconductor
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
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FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
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OOF
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