2N7000-D26Z ON Semiconductor

2N7000-D26Z electronic component of ON Semiconductor
2N7000-D26Z ON Semiconductor
2N7000-D26Z MOSFETs
2N7000-D26Z  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of 2N7000-D26Z MOSFETs across the USA, India, Europe, Australia, and various other global locations. 2N7000-D26Z MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. 2N7000-D26Z
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET N Trench 60V 200mA 3V @ 1mA 5 Ω @ 500mA,10V TO-92-3L RoHS
Datasheet: 2N7000-D26Z Datasheet (PDF)
Price (USD)
4000: USD 0.0845 ea
Line Total: USD 338 
Availability : 48500
  
Ship by Thu. 20 Nov to Wed. 26 Nov
QtyUnit Price
4000$ 0.0845
8000$ 0.0785
10000$ 0.0781
30000$ 0.0755

Availability 48500
Ship by Thu. 20 Nov to Wed. 26 Nov
MOQ : 4000
Multiples : 2000
QtyUnit Price
4000$ 0.0845
8000$ 0.0785
10000$ 0.0781
30000$ 0.0755


Availability 606
Ship by Thu. 20 Nov to Wed. 26 Nov
MOQ : 5
Multiples : 5
QtyUnit Price
5$ 0.4668
50$ 0.3636
150$ 0.2153
500$ 0.178
2000$ 0.1597
4000$ 0.1497


Availability 1923
Ship by Tue. 18 Nov to Thu. 20 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.56
10$ 0.3766
50$ 0.2954
100$ 0.2618
114$ 0.1666


Availability 106700
Ship by Thu. 20 Nov to Wed. 26 Nov
MOQ : 4000
Multiples : 2000
QtyUnit Price
4000$ 0.1034


Availability 6382
Ship by Thu. 20 Nov to Wed. 26 Nov
MOQ : 972
Multiples : 1
QtyUnit Price
972$ 0.2677
1200$ 0.2167
1209$ 0.2151
1478$ 0.176
2186$ 0.1189
3000$ 0.1171
6000$ 0.1082


Availability 23280
Ship by Thu. 20 Nov to Wed. 26 Nov
MOQ : 2000
Multiples : 2000
QtyUnit Price
2000$ 0.145
4000$ 0.1374
6000$ 0.1353
8000$ 0.1332

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Height
Length
Product
Series
Transistor Type
Width
Brand
Forward Transconductance - Min
Product Type
Factory Pack Quantity :
Subcategory
Category
Brand Category
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 2N7000-D26Z from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2N7000-D26Z and other electronic components in the MOSFETs category and beyond.

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The 2N7000-D26Z is a MOSFET (Metal Oxide Semiconductor Field Effect Transistor) with N-channel trench architecture produced by ON Semiconductor. It is provided in a three-lead, TO-92-3L, RoHS (Restriction of Hazardous Substances Directive) compliant package. It features a breakdown voltage of 60V and a drain current of 200mA at 3V and 5O at 500mA. The gate-source voltage is rated for 10V. This device is suitable for general purpose, low-voltage switching applications.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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