X-On Electronics has gained recognition as a prominent supplier of 2N7002LT1G MOSFETs across the USA, India, Europe, Australia, and various other global locations. 2N7002LT1G MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

2N7002LT1G ON Semiconductor

2N7002LT1G electronic component of ON Semiconductor
2N7002LT1G ON Semiconductor
2N7002LT1G MOSFETs
2N7002LT1G  Semiconductors

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See Product Specifications
Part No. 2N7002LT1G
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET 60V 115mA N-Channel
Datasheet: 2N7002LT1G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
20: USD 0.0464 ea
Line Total: USD 0.93 
Availability - 214428
Ship by Wed. 02 Jul to Mon. 07 Jul
MOQ: 20  Multiples: 20
Pack Size: 20
Availability Price Quantity
1163802
Ship by Wed. 25 Jun to Tue. 01 Jul
MOQ : 9000
Multiples : 3000
9000 : USD 0.0296
12000 : USD 0.0274
12000 : USD 0.0239

163229
Ship by Wed. 25 Jun to Tue. 01 Jul
MOQ : 3247
Multiples : 1
3247 : USD 0.0801
4000 : USD 0.065
6270 : USD 0.0415
6623 : USD 0.0392
7300 : USD 0.0356
11174 : USD 0.0232
12196 : USD 0.0213
14599 : USD 0.0178

214428
Ship by Wed. 02 Jul to Mon. 07 Jul
MOQ : 20
Multiples : 20
20 : USD 0.0464
200 : USD 0.0352
600 : USD 0.0302
3000 : USD 0.0168
9000 : USD 0.0158
21000 : USD 0.015

1152360
Ship by Wed. 25 Jun to Tue. 01 Jul
MOQ : 9000
Multiples : 3000
9000 : USD 0.0296

209520
Ship by Wed. 25 Jun to Tue. 01 Jul
MOQ : 6000
Multiples : 3000
6000 : USD 0.0467
9000 : USD 0.0441
27000 : USD 0.04
51000 : USD 0.0385
102000 : USD 0.0379

163229
Ship by Wed. 25 Jun to Tue. 01 Jul
MOQ : 6270
Multiples : 1
6270 : USD 0.0415

343380
Ship by Wed. 25 Jun to Tue. 01 Jul
MOQ : 9000
Multiples : 3000
9000 : USD 0.0324

29100

Ships to you between
Fri. 27 Jun to Wed. 02 Jul
MOQ : 3000
Multiples : 3000
3000 : USD 0.0176
6000 : USD 0.0171
9000 : USD 0.0167
12000 : USD 0.0165

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Height
Length
Product
Series
Transistor Type
Type
Width
Brand
Forward Transconductance - Min
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
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Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the 2N7002LT1G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2N7002LT1G and other electronic components in the MOSFETs category and beyond.

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The 2N7002LT1G is a N-channel, upgrade-enhanced, logic-level, 60V, 115mA MOSFET designed and manufactured by ON Semiconductor. It is packaged in a tiny SOT-23, allowing it to be integrated into a variety of applications, including portable devices. The device features dual-gate protection against Electrostatic Discharge (ESD) and is suitable for switching and linear applications. It features an ultra-low input capacitance and fast switching response. The low threshold voltage and on resistance of the 2N7002LT1G make it ideal for low voltage applications. The maximum drain current of the device is 115mA and the drain-source breakdown voltage is 60V. The device can also operate at temperatures ranging from -55C to 150C. Overall, the 2N7002LT1G is an excellent choice for low voltage switching and linear applications.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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