2N7002WT1G ON Semiconductor

2N7002WT1G electronic component of ON Semiconductor
2N7002WT1G ON Semiconductor
2N7002WT1G MOSFETs
2N7002WT1G  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of 2N7002WT1G MOSFETs across the USA, India, Europe, Australia, and various other global locations. 2N7002WT1G MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. 2N7002WT1G
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET SMALL SIGNAL MOSFET 6.8V LO C
Datasheet: 2N7002WT1G Datasheet (PDF)
Price (USD)
3000: USD 0.0292 ea
Line Total: USD 87.6 
Availability : 116400
  
Ship by Fri. 08 Aug to Thu. 14 Aug
QtyUnit Price
3000$ 0.0292
9000$ 0.0269
27000$ 0.0265
51000$ 0.0251
102000$ 0.0248
150000$ 0.0244
252000$ 0.024
501000$ 0.0238

Availability 116400
Ship by Fri. 08 Aug to Thu. 14 Aug
MOQ : 3000
Multiples : 3000
QtyUnit Price
3000$ 0.0292
9000$ 0.0269
27000$ 0.0265
51000$ 0.0251
102000$ 0.0248
150000$ 0.0244
252000$ 0.024
501000$ 0.0238


Availability 5664
Ship by Fri. 15 Aug to Wed. 20 Aug
MOQ : 20
Multiples : 20
QtyUnit Price
20$ 0.073
200$ 0.059
600$ 0.0384
3000$ 0.0282
9000$ 0.0255
21000$ 0.0242


Availability 12082
Ship by Wed. 06 Aug to Fri. 08 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.1316
50$ 0.105
100$ 0.0938
500$ 0.0658
511$ 0.0378


Availability 132
Ship by Mon. 04 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.2429
25$ 0.1215
50$ 0.1093
75$ 0.0911
100$ 0.082


Availability 40003
Ship by Fri. 08 Aug to Thu. 14 Aug
MOQ : 1946
Multiples : 1
QtyUnit Price
1946$ 0.1336
1952$ 0.1332
1957$ 0.1329
3000$ 0.1325
6000$ 0.127
15000$ 0.1266
30000$ 0.1263


Availability 340470
Ship by Fri. 08 Aug to Thu. 14 Aug
MOQ : 12000
Multiples : 3000
QtyUnit Price
12000$ 0.0252


Availability 36215
Ship by Fri. 08 Aug to Thu. 14 Aug
MOQ : 3572
Multiples : 1
QtyUnit Price
3572$ 0.0728
4717$ 0.0551
9000$ 0.0527
18000$ 0.0423


Availability 107573
Ship by Fri. 08 Aug to Thu. 14 Aug
MOQ : 9494
Multiples : 1
QtyUnit Price
9494$ 0.0411
10601$ 0.0368
100000$ 0.0295


Availability 558720
Ship by Fri. 08 Aug to Thu. 14 Aug
MOQ : 12000
Multiples : 3000
QtyUnit Price
12000$ 0.0247


Availability 43650
Ship by Fri. 08 Aug to Thu. 14 Aug
MOQ : 9000
Multiples : 3000
QtyUnit Price
9000$ 0.0353
24000$ 0.031
36000$ 0.0289


Availability 116400
Ship by Fri. 08 Aug to Thu. 14 Aug
MOQ : 9000
Multiples : 3000
QtyUnit Price
9000$ 0.0378
9000$ 0.0342
27000$ 0.0319
51000$ 0.0302
102000$ 0.0297

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Height
Length
Product
Series
Transistor Type
Width
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Category
Brand Category
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We are delighted to provide the 2N7002WT1G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2N7002WT1G and other electronic components in the MOSFETs category and beyond.

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Enhancement Mode Field Effect Transistor NChannel 2N7002W Features www.onsemi.com Low OnResistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage SC70/SOT323 UltraSmall Surface Mount Package CASE 419 These Devices are PbFree and are RoHS Compliant SIMPLIFIED SCHEMATIC ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A Parameter Symbol Value Unit DraintoSource Voltage V 60 V DSS V 60 V DrainGate Voltage R 1.0 M GS DGR GateSource Voltage V V GSS Continuous 20 Pulsed 40 GateSource Voltage I mA D Continuous 115 Continuous 100C 73 MARKING DIAGRAM Pulsed 800 & PIN ASSIGNMENT Drain Junction and Storage Temperature Range T , T 55 to C J STG 3 +150 D Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be &E&Y assumed, damage may occur and reliability may be affected. &Z2N&G S THERMAL CHARACTERISTICS G 1 2 Parameter Symbol Max Unit Gate Source Total Device Dissipation P 200 mW Line 1: D Derating above T = 25C 1.6 mW/C &E = Space A &Y = Binary Year Code Thermal Resistance, JunctiontoAmbient R 625 C/W JA (Note 1) Line 2: 1. Device mounted on FR4 PCB, 1 inch x 0.85 inch x 0.062 inch. Minimum land &Z = Designates the Assembly Plant Code pad size. 2N = Specific Device Code &G = 1digit Week Code ORDERING INFORMATION Device Package Shipping 2N7002W SC70 3000 / Tape & Reel (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2020 1 Publication Order Number: March, 2021 Rev. 2 2N7002WFCS/D2N7002W ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Parameter Symbol Test Condition Min Typ Max Units OFF CHARACTERISTICS (Note 2) DrainSource Breakdown Voltage BV V = 0 V, I = 10 A 60 78 V DSS GS D Zero Gate Voltage Drain Current I T = 25C 0.001 1.0 A DSS C V = 0 V, GS V = 60 V T = 125C 7 500 DS C GateBody Leakage Current I V = 20 V, V = 0 V 0.2 10 nA GSS GS DS ON CHARACTERISTICS (Note 2) Gate Threshold Voltage V V = V , I = 250 A 1.0 1.76 2.0 V GS(th) GS DS D Static DrainSource OnResistance R V = 5 V, I = 0.05 A 1.6 7.5 DS(ON) GS D V = 10 V, I = 0.5 A, T = 125C 2.53 13.5 GS D J OnState Drain Current I V = 10 V, V = 7.5 V 0.5 1.43 A D(ON) GS DS Forward Transconductance g V = 10 V, I = 0.2 A 80 356.5 mS FS DS D DYNAMIC CHARACTERISTICS Input Capacitance C 37.8 50 pF ISS Output Capacitance C V = 0 V, V = 25 V, f = 1.0 MHz 12.4 25 OSS GS DS Reverse Transfer Capacitance C 6.5 7.0 RSS SWITCHING CHARACTERISTICS TurnOn Delay Time t 5.85 20 ns D(ON) V = 10 V, V = 30 V, I = 0.2 A, GEN DD D R = 150 , R = 25 L GEN TurnOff Delay Time t 12.5 20 D(OFF) Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Short duration test pulse used to minimize selfheating effect. www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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