Ordering number : ENA1118A 2SC5551A RF Transistor 2SC5551A Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current I V =20V, I =0A 1.0 A CBO CB E Emitter Cutoff Current I V =1V, I =0A 5.0 A EBO EB C h1V =5V, I =50mA 90 270 FE CE C DC Current Gain h2V =5V, I =300mA 20 FE CE C Gain-Bandwidth Product f V =5V, I =50mA 3.5 GHz T CE C Output Capacitance Cob 2.9 4.0 pF V =10V, f=1MHz CB Reverse Transfer Capacitance Cre 1.5 pF Collector-to-Emitter Saturation Voltage V (sat) I =50mA, I =5mA 0.07 0.3 V CE C B Base-to-Emitter Saturation Voltage V (sat) I =50mA, I =5mA 0.8 1.2 V BE C B * : The 2SC5551A is classi ed by 50mA h as follows : FE Rank E F h 90 to 180 135 to 270 FE Ordering Information Device Package Shipping memo 2SC5551AE-TD-E PCP 1,000pcs./reel Pb Free 2SC5551AF-TD-E PCP 1,000pcs./reel I -- V h -- I C CE FE C 1000 100 V =5V CE 7 5 80 3 2 60 100 7 40 5 3 100A 20 2 50A I =0A B 0 10 0 4 8 12 16 20 2 3 5 7 2 3 5 7 2 3 5 7 1000 1.0 10 100 IT01066 Collector Current, I -- mA IT01067 Collector-to-Emitter Voltage, V -- V C CE No. A1118-2/6 150A 200A 350A 400A 300 A 250 A 500 A 450 A Collector Current, I -- mA C DC Current Gain, h FE