X-On Electronics has gained recognition as a prominent supplier of 2SC5566-TD-E Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2SC5566-TD-E Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2SC5566-TD-E ON Semiconductor

2SC5566-TD-E electronic component of ON Semiconductor
2SC5566-TD-E ON Semiconductor
2SC5566-TD-E Bipolar Transistors - BJT
2SC5566-TD-E  Semiconductors

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See Product Specifications
Part No. 2SC5566-TD-E
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: ON Semiconductor Bipolar Transistors - BJT BIP NPN 4A 50V
Datasheet: 2SC5566-TD-E Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1371: USD 0.342 ea
Line Total: USD 468.88 
Availability - 88270
Ship by Thu. 05 Jun to Wed. 11 Jun
MOQ: 1371  Multiples: 1
Pack Size: 1
Availability Price Quantity
532
Ship by Thu. 12 Jun to Tue. 17 Jun
MOQ : 1
Multiples : 1
1 : USD 0.771
10 : USD 0.6114
30 : USD 0.5426
100 : USD 0.3086
500 : USD 0.2807
1000 : USD 0.2659

129
Ship by Tue. 03 Jun to Thu. 05 Jun
MOQ : 1
Multiples : 1
1 : USD 0.532
3 : USD 0.504
10 : USD 0.5026

111756
Ship by Thu. 05 Jun to Wed. 11 Jun
MOQ : 1371
Multiples : 1
1371 : USD 0.342
10000 : USD 0.3049
100000 : USD 0.2555

450080
Ship by Thu. 05 Jun to Wed. 11 Jun
MOQ : 1371
Multiples : 1
1371 : USD 0.342
10000 : USD 0.3049
100000 : USD 0.2555

88270
Ship by Thu. 05 Jun to Wed. 11 Jun
MOQ : 1371
Multiples : 1
1371 : USD 0.342
10000 : USD 0.3049
100000 : USD 0.2555

605
Ship by Thu. 05 Jun to Wed. 11 Jun
MOQ : 372
Multiples : 1
372 : USD 0.6981
541 : USD 0.481
775 : USD 0.3354

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
Continuous Collector Current
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 2SC5566-TD-E from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SC5566-TD-E and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Ordering number : EN6307C 2SA2013/2SC5566 Bipolar Transistor 2SA2013 / 2SC5566 Continued from preceding page. Parameter Symbol Conditions Ratings Unit Collector Current I (--)4 A C Collector Current (Pulse) I (--)7 A CP Base Current I (--)600 mA B 2 When mounted on ceramic substrate (250mm 0.8mm) 1.3 W Collector Dissipation P C Tc=25C 3.5 W Junction Temperature Tj 150 C Storage Temperature Tstg --55 to +150 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. at Ta=25C Electrical Characteristics Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current I V =(--)40V, I =0A (--)1 A CBO CB E Emitter Cutoff Current I V =(--)4V, I =0A (--)1 A EBO EB C DC Current Gain h V =(--)2V, I =(--)500mA 200 560 FE CE C Gain-Bandwidth Product f V =(--)10V, I =(--)500mA (360)400 MHz T CE C Output Capacitance Cob V =(--)10V, f=1MHz (24)15 pF CB V (sat)1 I =(--)1A, I =(--)50mA (--105)85 (--180)130 mV CE C B Collector-to-Emitter Saturation Voltage V (sat)2 I =(--)2A, I =(--)100mA (--200)150 (--340)225 mV CE C B Base-to-Emitter Saturation Voltage V (sat) I =(--)2A, I =(--)100mA (--)0.89 (--)1.2 V BE C B Collector-to-Base Breakdown Voltage V I =(--)10A, I =0A (--50)100 V (BR)CBO C E Collector-to-Emitter Breakdown Voltage V I =(--)100A, R =0 (--50)100 V (BR)CES C BE Collector-to-Emitter Breakdown Voltage V I =(--)1mA, R = (--)50 V (BR)CEO C BE Emitter-to-Base Breakdown Voltage V I =(--)10A, I =0A (--)6 V (BR)EBO E C Turn-ON Time t (30)35 ns on Storage Time t See speci ed Test Circuit. (230)300 ns stg Fall Time t (15)20 ns f Switching Time Test Circuit I B1 PW=20s OUTPUT D.C.1% I B2 INPUT R V 10 B R R L 25 50 + + 100F 470F V = --5V V =25V BE CC I =10I = --10I =1A C B1 B2 For PNP, the polarity is reversed. Ordering Information Device Package Shipping memo 2SA2013-TD-E PCP 1,000pcs./reel Pb Free 2SC5566-TD-E PCP 1,000pcs./reel No.6307-2/8

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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