Product Information

2SK3796-3-TL-E

2SK3796-3-TL-E electronic component of ON Semiconductor

Datasheet
JFET Junction FET 30V 10mA Nch SMCP

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 3206
Multiples : 3206

Stock Image

2SK3796-3-TL-E
ON Semiconductor

3206 : USD 0.1312
N/A

Obsolete
0 - WHS 2

MOQ : 1
Multiples : 1

Stock Image

2SK3796-3-TL-E
ON Semiconductor

1 : USD 0.4109
10 : USD 0.3091
100 : USD 0.1684
1000 : USD 0.1261
3000 : USD 0.1081
9000 : USD 0.1063
24000 : USD 0.1063
45000 : USD 0.1053
99000 : USD 0.101
N/A

Obsolete
0 - WHS 3

MOQ : 3000
Multiples : 3000

Stock Image

2SK3796-3-TL-E
ON Semiconductor

3000 : USD 0.1166
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Vds - Drain-Source Breakdown Voltage
Vgs - Gate-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Configuration
Pd - Power Dissipation
Package / Case
Packaging
Series
Drain Source Voltage Vds
Brand
Continuous Drain Current
Drain-Source Current At Vgs 0
Forward Transconductance - Min
Gate-Source Breakdown Voltage
Gate-Source Cutoff Voltage
Power Dissipation
Rds On
Factory Pack Quantity :
Type
Cnhts
Hts Code
Mxhts
Taric
LoadingGif

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LOT No. LOT No. Ordering number : EN8636B 2SK3796 N-Channel JFET 2SK3796 Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Gate-to-Drain Breakdown Voltage V I =--10mA, V =0V --30 V (BR)GDS G DS Gate Cutoff Current I V =--20V, V =0V --1.0 nA GSS GS DS Cutoff Voltage V (off) V =10V, I =1mA --0.18 --0.95 --2.2 V GS DS D Drain Current I V =10V, V =0V 0.6* 3.0* mA DSS DS GS Forward Transfer Admittance yfs V =10V, V =0V, f=1kHz 3.0 6.5 mS DS GS Input Capacitance Ciss V =10V, V =0V, f=1MHz 4 pF DS GS Reverse Transfer Capacitance Crss V =10V, V =0V, f=1MHz 1.1 pF DS GS Static Drain-to-Source On-State Resistance R (on) V =10mV, V =10V 200 W DS DS GS Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. * : The 2SK3796 is classified by I as follows : (unit : mA) DSS Rank 2 3 I 0.6 to 1.5 1.2 to 3.0 DSS Ordering Information Device Package Shipping memo 2SK3796-2-TL-E SMCP 3,000pcs./reel Pb Free 2SK3796-3-TL-E SMCP 3,000pcs./reel I -- V I -- V D DS D DS 5.0 5 4.0 4 V =0V GS V =0V 3.0 GS 3 2.0 2 1.0 1 0 0 01.0 2.03.0 4.05.0 05 10 15 20 25 30 Drain-to-Source Voltage, V -- V ITR00633 Drain-to-Source Voltage, V -- V ITR00634 DS DS I -- V I -- V D GS D GS 8 5 V =10V V =10V DS DS 4 6 3 4 2 2 1 0 0 --1.50 --1.25 --1.00 --0.75 --0.50 --0.25 0 --1.2---1.0 -0.8 --0.6--0.4 --0.20 Gate-to-Source Voltage, V -- V HD00635 Gate-to-Source Voltage, V -- V ITR00636 GS GS No.8636-2/4 --0.1V --0.1V --0.2V --0.2V --0.3V --0.3V --0.4V --0.4V 1.0mA 75C 3.0mA 25C Ta=--25C Drain Current, I -- mA D Drain Current, I -- mA D Drain Current, I -- mA D Drain Current, I -- mA D

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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