709582CB ON Semiconductor

BAS31 Small Signal Diode February 2015 BAS31 Small Signal Diode Connection Diagram 3 3 3 L21 2 1 2 1 12 SOT-23 Ordering Information Part Number Top Mark Package Packing Method BAS31 L21 SOT-23 3L Tape and Reel, 7 inch Reel, 3000 pcs BAS31_D87Z L21 SOT-23 3L Tape and Reel, 13 inch Reel, 10000 pcs (1), (2) Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera- ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi- tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at T = 25C unless otherwise noted. A Symbol Parameter Value Unit V Maximum Repetitive Reverse Voltage 120 V RRM I Average Rectified Forward Current 200 mA F(AV) Pulse Width = 1.0 second 1.0 Non-Repetitive Peak Forward I A FSM Surge Current Pulse Width = 1.0 microsecond 2.0 T Storage Temperature Range -55 to +150 C STG T Operating Junction Temperature 150 C J Notes: 1. These ratings are based on a maximum junction temperature of 150C. 2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or low-duty-cycle operations. 2001 Fairchild Semiconductor Corporation www.fairchildsemi.com BAS31 Rev. 1.3 BAS31 Small Signal Diode Thermal Characteristics Values are at T = 25C unless otherwise noted. A Symbol Parameter Value Unit P Power Dissipation 350 mW D R Thermal Resistance, Junction-to-Ambient 357 C/W JA Electrical Characteristics Values are at T = 25C unless otherwise noted. A Symbol Parameter Conditions Min. Max. Unit V Breakdown Voltage I = 1.0 mA 120 V R R I = 10 mA 750 mV F I = 50 mA 840 mV F V Forward Voltage I = 100 mA 900 mV F F I = 200 mA 1.00 V F I = 400 mA 1.25 V F V = 90 V 100 nA R I Reverse Current R V = 90 V, T = 150C 100 A R A C Total Capacitance V = 0, f = 1.0 MHz 35 pF T R I = I = 30 mA, I = 3.0 mA, F R RR t Reverse Recovery Time 50 ns rr R = 100 L 2001 Fairchild Semiconductor Corporation www.fairchildsemi.com BAS31 Rev. 1.3 2