Product Information

715123AB

715123AB electronic component of ON Semiconductor

Datasheet
2N7000 S.S NCH TMOS FE* T/HOLE

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.3853 ea
Line Total: USD 0.3853

47 - Global Stock
Ships to you by
Fri. 29 Mar
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
47 - Global Stock


Ships to you by Fri. 29 Mar

MOQ : 1
Multiples : 1

Stock Image

715123AB
ON Semiconductor

1 : USD 0.3853
10 : USD 0.1927
50 : USD 0.1734
250 : USD 0.1445
500 : USD 0.13

     
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Channel Mode
Configuration
Series
Brand
Forward Transconductance - Min
Factory Pack Quantity :
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Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductors product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. Typical parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor August 2016 2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor Description Features These N-channel enhancement mode field effect transis- High Density Cell Design for Low R DS(ON) tors are produced using Fairchild's proprietary, high cell Voltage Controlled Small Signal Switch density, DMOS technology. These products have been Rugged and Reliable designed to minimize on-state resistance while providing High Saturation Current Capability rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 400 mA DC and can deliver pulsed currents up to 2 A. These products are particularly suited for low-voltage, low-cur- rent applications, such as small servo motor control, power MOSFET gate drivers, and other switching appli- cations. D D S G G TO-92 1 SOT-23 (TO-236AB) 1. Source 2. Gate 3. Drain S 2N7002/NDS7002A Ordering Information Min Order Qty / Part Number Marking Package Packing Method Immediate Pack Qty 2N7000 2N7000 TO-92 3L Bulk 10000 / 1000 2N7000_D74Z 2N7000 TO-92 3L Ammo 2000 / 2000 2N7000_D75Z 2N7000 TO-92 3L Tape and Reel 2000 / 2000 2N7000_D26Z 2N7000 TO-92 3L Tape and Reel 2000 / 2000 2N7002 702 SOT-23 3L Tape and Reel 3000 / 3000 NDS7002A 712 SOT-23 3L Tape and Reel 3000 / 3000 1998 Fairchild Semiconductor Corporation www.fairchildsemi.com 2N7000 / 2N7002 / NDS7002A Rev. 2.10 1

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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