MC74HC86A
Quad 2-Input Exclusive
OR Gate
HighPerformance SiliconGate CMOS
The MC74HC86A is identical in pinout to the LS86. The device
MC74HC86A
MAXIMUM RATINGS
SymbolParameter Value Unit
This device contains protection
circuitry to guard against damage
V DC Supply Voltage (Referenced to GND) 0.5 to +7.0 V
CC
due to high static voltages or electric
V DC Input Voltage (Referenced to GND) 0.5 to V + 0.5 V
in CC
fields. However, precautions must
V DC Output Voltage (Referenced to GND) 0.5 to V + 0.5 V
out CC be taken to avoid applications of any
voltage higher than maximum rated
I DC Input Current, per Pin 20 mA
in
voltages to this highimpedance cir-
I DC Output Current, per Pin 25 mA
out
cuit. For proper operation, V and
in
I DC Supply Current, V and GND Pins 50 mA
V should be constrained to the
CC CC out
range GND (V or V ) V .
in out CC
P Power Dissipation in Still Air, SOIC Package 500 mW
D
Unused inputs must always be
TSSOP Package 450
tied to an appropriate logic voltage
T Storage Temperature 65 to +150 C
stg level (e.g., either GND or V ).
CC
Unused outputs must be left open.
T Lead Temperature, 1 mm from Case for 10 Seconds C
L
(Plastic DIP, SOIC or TSSOP Package) 260
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of
these limits are exceeded, device functionality should not be assumed, damage may occur and
reliability may be affected.
Derating: SOIC Package: 7mW/C from 65 to 125C
TSSOP Package: 6.1 mW/C from 65 to 125C
RECOMMENDED OPERATING CONDITIONS
Symbol Parameter Min Max Unit
V DC Supply Voltage (Referenced to GND) 2.0 6.0 V
CC
V , V DC Input Voltage, Output Voltage (Referenced to GND) 0 V V
in out CC
T Operating Temperature, All Package Types 55 + 125 C
A
t , t Input Rise and Fall Time V = 2.0 V 0 1000 ns
r f CC
(Figure 1) V = 4.5 V 0 500
CC
V = 6.0 V 0 400
CC
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
Guaranteed Limit
55 to
V
CC
25C
Symbol Parameter Test Conditions V 85C 125C Unit
V Minimum HighLevel Input V = 0.1 V or V 0.1 V 2.0 1.5 1.5 1.5 V
IH out CC
Voltage |I | 20 A 3.0 2.1 2.1 2.1
out
4.5 3.15 3.15 3.15
6.0 4.2 4.2 4.2
V Maximum LowLevel Input V = 0.1 V or V 0.1 V 2.0 0.5 0.5 0.5 V
IL out CC
Voltage |I | 20 A 3.0 0.9 0.9 0.9
out
4.5 1.35 1.35 1.35
6.0 1.8 1.8 1.8
V Minimum HighLevel Output V = V or V 2.0 1.9 1.9 1.9 V
OH
in IH IL
Voltage |I | 20 A 4.5 4.4 4.4 4.4
out
6.0 5.9 5.9 5.9
V = V or V |I | 2.4 mA 3.0 2.48 2.34 2.20
in IH IL out
|I | 4.0 mA 4.5 3.98 3.84 3.70
out
|I | 5.2 mA 6.0 5.48 5.34 5.20
out
V Maximum LowLevel Output V = V or V 2.0 0.1 0.1 0.1 V
OL
in IH IL
Voltage |I | 20 A 4.5 0.1 0.1 0.1
out
6.0 0.1 0.1 0.1
V = V or V |I | 2.4 mA 3.0 0.26 0.33 0.40
in IH IL out
|I | 4.0 mA 4.5 0.26 0.33 0.40
out
|I | 5.2 mA 6.0 0.26 0.33 0.40
out
I Maximum Input Leakage Current V = V or GND 6.0 0.1 1.0 1.0 A
in in CC
I Maximum Quiescent Supply V = V or GND 6.0 1.0 10 40 A
CC in CC
Current (per Package) I = 0 A
out