80SQ045N Preferred Device Axial Lead Rectifier These devices employ the Schottky Barrier principle in a large area metaltosilicon power diode. Stateoftheart geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in lowvoltage, highfrequency inverters, free wheeling diodes, and polarity 80SQ045N THERMAL CHARACTERISTICS 0.9 in x 0.9 in 6.75 in x 6.75 in Copper Pad Size Copper Pad Size Characteristic Symbol Unit Thermal Resistance, JunctiontoLead (See Note 2 Mounting Data) R 13 12 C/W JL Thermal Resistance, JunctiontoAmbient (See Note 2 Mounting Data) R 50 40 JA ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) L Characteristic Symbol Max Unit Maximum Instantaneous Forward Voltage (Note 1) v V F (i = 8.0 A, T = 25C) 0.55 F L Maximum Instantaneous Reverse Current Rated dc Voltage (Note 1) i mA R T = 25C 1.0 L T = 100C 50 L 1. Pulse Test: Pulse Width = 300 s, Duty Cycle = 2.0%. 30 30 10 10 MBR845 100C 1 1 75C 125C 100C 75C 125C 25C 25C 0.1 0.1 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 V , INSTANTANEOUS VOLTAGE (VOLTS) V , INSTANTANEOUS VOLTAGE (VOLTS) F F Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage 10,000 1E01 125C 1E02 100C f = 1 MHz 75C 1E03 T = 25C J 1000 1E04 25C 1E05 1E06 100 0 5 10 15 20 25 30 35 40 45 50 0.1 1 10 100 V , REVERSE VOLTAGE (VOLTS) V , REVERSE VOLTAGE (VOLTS) R R Figure 3. Typical Reverse Current Figure 4. Typical Capacitance