BAS70SV ON Semiconductor

BAS70SV 70 V Dual-Schottky Barrier Diodes June 2013 BAS70SV 70 V Dual-Schottky Barrier Diodes Features Low Forward-Voltage Drop C1 A2 Low Capacitance Low Leakage Current Fast Switching Ultra-Small Surface-Mount Package (Pin1) A1 C2 Lead Free by Design / RoHS Compliant SOT-563F BAS70SV Marking : AD Green Compound ELECTRICAL SYMBOL Note: Pinouts are symmetrical. Pin 1 & 4 are interchangeable. 0.6mm Maximum Package Height The placement of the device in the carrier tape can be of either orientation. Ordering Information Part Number Marking Package Packing Method BAS70SV AD SOT-563F 6L Tape and Reel Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera- ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi- tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at T = 25C unless otherwise noted. A Symbol Parameter Value Units V Maximum Repetitive Reverse Voltage 70 V RRM I Average Rectified Forward Current 70 mA F(AV) I Forward Surge Current (8.3mS Single Half Sine Wave) 2.5 A FSM T T Operating Junction and Storage Temperature Range -55 to +150 C J STG Thermal Characteristics Symbol Parameter Value Units P Power Dissipation 200 mW D (1) R Thermal Resistance, Junction to Ambient 625 C/W JA Note: 1. Device mounted on board compliant to JESD51-2 and JESD51-3 standards. 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com BAS70SV Rev. 1.1.0 1 BAS70SV 70 V Dual-Schottky Barrier Diodes Electrical Characteristics Values are at T = 25C unless otherwise noted. A Symbol Parameter Test Condition Min. Typ. Max. Units V Breakdown Voltage I = 100 A7093 V BR R = 50 V 0.02 0.10 A V R I Reverse Current R V = 70 V 2.5 A R I = 1 mA 365 410 mV F V Forward Voltage F I = 15 mA 855 1000 mV F t Reverse-Recovery Time I = I = 10 mA, I = 0.1 I 1.55 8.00 ns rr F R rr R Cap Capacitance V = 0 V, f = 1 MHz 1.62 3.00 pF R 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com BAS70SV Rev. 1.1.0 2