Product Information

BAW56LT1

BAW56LT1 electronic component of ON Semiconductor

Datasheet
Diode Small Signal Switching 70V 0.2A 3-Pin SOT-23 T/R

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

50: USD 3.5324 ea
Line Total: USD 176.62

121 - Global Stock
Ships to you between
Wed. 04 Oct to Tue. 10 Oct
MOQ: 50  Multiples: 1
Pack Size: 1
Availability Price Quantity
121 - Global Stock


Ships to you between Wed. 04 Oct to Tue. 10 Oct

MOQ : 50
Multiples : 1

Stock Image

BAW56LT1
ON Semiconductor

50 : USD 4.3805
100 : USD 1.8703
500 : USD 0.4348
2500 : USD 0.1109

     
Manufacturer
ON Semiconductor
Product Category
Diodes - General Purpose, Power, Switching
RoHS - XON
N Icon ROHS
Packaging
-
Brand
ON Semiconductor
Factory Pack Quantity :
0
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BAW56L, SBAW56L Dual Switching Diode Common Anode Features S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 Qualified and www.onsemi.com PPAP Capable These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (EACH DIODE) SOT23 (TO236) Rating Symbol Value Unit CASE 318 STYLE 12 Reverse Voltage V 70 V R Forward Current I 200 mA F CATHODE Forward Surge Current I 2.0 A FSM 1 ANODE (60 Hz 1 cycle) 3 NonRepetitive Peak Forward Current I 4.0 A 2 FSM t = 1 s (Note 3) CATHODE Repetitive Peak Forward Current I 500 mA FRM Pulse Wave = 1 sec, Duty Cycle = 66% MARKING DIAGRAM THERMAL CHARACTERISTICS Characteristic Symbol Max Unit A1 M Total Device Dissipation FR5 Board P 225 mW D (Note 1) T = 25C A 1 Derate above 25C 1.8 mW/C Thermal Resistance, R 556 C/W A1 = Device Code JA JunctiontoAmbient M = Date Code* = PbFree Package Total Device Dissipation P 300 mW D Alumina Substrate, (Note: Microdot may be in either location) (Note 2) T = 25C 2.4 mW/C A *Date Code orientation and/or overbar may Derate above 25C vary depending upon manufacturing location. Thermal Resistance, R 417 C/W JA JunctiontoAmbient Junction and Storage Temperature T , T 55 to C J stg ORDERING INFORMATION +150 Device Package Shipping Stresses exceeding those listed in the Maximum Ratings table may damage the BAW56LT1G SOT23 3,000 / device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. (PbFree) Tape & Reel 1. FR5 = 1.0 0.75 0.062 in. SBAW56LT1G SOT23 3,000 / 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. (PbFree) Tape & Reel 3. Square Wave T = 25C. j BAW56LT3G SOT23 10,000 / (PbFree) Tape & Reel SBAW56LT3G SOT23 10,000 / (PbFree) Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 1994 1 Publication Order Number: October, 2016 Rev. 10 BAW56LT1/DBAW56L, SBAW56L ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) (Each Diode) A Characteristic Symbol Min Max Unit Reverse Breakdown Voltage V V (BR) (I = 100 A) 70 (BR) Reverse Voltage Leakage Current I A R (V = 25 V, T = 150C) 30 R J (V = 70 V) 2.5 R (V = 70 V, T = 150C) 50 R J Diode Capacitance C pF D (V = 0 V, f = 1.0 MHz) 2.0 R Forward Voltage V mV F (I = 1.0 mA) 715 F (I = 10 mA) 855 F (I = 50 mA) 1000 F (I = 150 mA) 1250 F Reverse Recovery Time t ns rr (I = I = 10 mA, I = 1.0 mA) (Figure 1) R = 100 6.0 F R R(REC) L Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 820 I F +10 V t t t 2.0 k r p 0.1 F I F t t 100 H rr 10% 0.1 F 90% D.U.T. i = 1.0 mA R(REC) 50 OUTPUT 50 INPUT I R PULSE SAMPLING V R OUTPUT PULSE GENERATOR OSCILLOSCOPE INPUT SIGNAL (I = I = 10 mA MEASURED F R at i = 1.0 mA) R(REC) Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (I ) of 10 mA. F Notes: 2. Input pulse is adjusted so I is equal to 10 mA. R(peak) Notes: 3. t t p rr Figure 1. Recovery Time Equivalent Test Circuit www.onsemi.com 2

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
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