BBS3002-DL-1E ON Semiconductor

BBS3002-DL-1E electronic component of ON Semiconductor
BBS3002-DL-1E ON Semiconductor
BBS3002-DL-1E MOSFETs
BBS3002-DL-1E  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of BBS3002-DL-1E MOSFETs across the USA, India, Europe, Australia, and various other global locations. BBS3002-DL-1E MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No.BBS3002-DL-1E
Manufacturer:ON Semiconductor
Category:MOSFETs
Description:MOSFET NCH 4V DRIVE SERIES
Datasheet:BBS3002-DL-1E Datasheet (PDF)
Shipping Charges:Click here for details
AI Image
Price (USD)
  
800: USD 2.9393 ea
Line Total: USD 2351.44 
Availability : 0
  
QtyUnit Price
800$ 2.9393
8000$ 2.8162
80000$ 2.7598
  

Availability0
Ship by Thu. 25 Jun to Wed. 01 Jul
MOQ : 800
Multiples : 800
QtyUnit Price
800$ 2.9393
8000$ 2.8162
80000$ 2.7598


Availability0
Ship by Thu. 25 Jun to Wed. 01 Jul
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 5.1155
10$ 4.5366
30$ 4.1922
100$ 3.8437
500$ 3.6844
800$ 3.6112


Availability0
Ship by Tue. 23 Jun to Thu. 25 Jun
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 8.2432
10$ 5.3622
25$ 5.1781
100$ 4.4302
250$ 4.292
500$ 3.7857
800$ 3.5902
2400$ 3.4406
4800$ 3.2565

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Series
Brand
Ciss - Input Capacitance
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BBS3002-DL-1E from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BBS3002-DL-1E and other electronic components in the MOSFETs category and beyond.

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Ordering number : ENA1357C BBS3002 P-Channel Power MOSFET Coss Crss t (off) d Tc=75C --25C Ciss 25C t f BBS3002 I -- V I -- V D DS D GS --200 --200 Tc=25C V = --10V DS --180 --180 --140 --140 --160 --160 --120 --120 --100 --100 --80 --80 --60 --60 --40 --40 V = --3V GS --20 --20 0 00 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 --1.8 --2.0 0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0 --4.5 --5.0 Drain to Source Voltage, V -- V IT14173 Gate to Source Voltage, V -- V IT14174 DS GS R (on) -- V R (on) -- Tc DS GS DS 20 12 I = --50A Single pulse D 18 Single pulse 10 16 14 8 12 10 6 8 4 6 4 2 2 0 0 --2 --3 --4 --5 --6 --7 --8 --9 --10 --50 --25 0 25 50 75 100 125 150 Gate to Source Voltage, V -- V IT14175 Case Temperature, Tc -- C IT14176 GS yfs -- I I -- V D S SD --1K 3 7 V = --10V V =0V 5 DS GS 2 3 Single pulse 2 --100 100 7 5 7 3 2 5 --10 7 3 5 3 2 2 --1.0 7 5 10 3 2 7 --0.1 5 7 5 3 3 2 --0.01 2 7 5 3 1.0 2 7 --0.001 23 5 7 2 357 23 57 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --0.1 --1.0 --10 --100 Drain Current, I -- A IT14177 Diode Forward Voltage, V -- V IT17199 D SD SW Time -- I Ciss, Coss, Crss -- V D DS 5 3 V = --30V f=1MHz DD 2 V = --10V 3 GS 2 10000 1000 7 7 5 5 3 3 2 2 1000 100 t (on) d 7 7 5 5 23 5 7 2 357 23 57 0 --5 --10 --15 --20 --25 --30 --0.1 --1.0 --10 --100 Drain to Source Voltage, V -- V Drain Current, I -- A IT14179 IT14180 DS D No. A1357-2/6 --4V V = --10V, I = --50A GS D t r V = --4V, I = --50A GS D 25C 75C Tc= --25C --6V --8V --10V 25C --25C Tc=75C 25C Tc=75C --25C 25C 75C Tc= --25C Static Drain to Source Switching Time, SW Time -- ns Forward Transfer Admittance, yfs -- S On-State Resistance, R (on) -- m Drain Current, I -- A DS D Static Drain to Source Ciss, Coss, Crss -- pF Source Current, I -- A On-State Resistance, R (on) -- m Drain Current, I -- A S DS D

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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