BCX70H BCX70H 3 General Purpose Transistor 2 SOT-23 1 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T =25C unless otherwise noted a Symbol Parameter Value Units V Collector-Base Voltage 45 V CBO V Collector-Emitter Voltage 45 V CEO V Emitter-Base Voltage 5 V EBO I Collector Current 200 mA C P Collector Power Dissipation 350 mW C T Storage Temperature -55 ~ 150 C STG Refer to KST3904 for graphs Electrical Characteristics T =25C unless otherwise noted a Symbol Parameter Test Condition Min. Max. Units BV Collector-Emitter Breakdown Voltage I =2.0mA, I =0 45 V CEO C B BV Emitter-Base Breakdown Voltage I =1.0 A, I =0 5 V EBO E C I Collector Cut-off Current V =32V, V =0 20 nA CES CE BE I Emitter Cut-off Current V =4V, I =0 20 nA EBO EB C h DC Current Gain V =5V, I =10 A 20 FE CE C V =5V, I =2.0mA 180 310 CE C V =1V, I =50mA 70 CE C V (sat) Collector-Emitter Saturation Voltage I =10mA, I =0.25mA 0.35 V CE C B I =50mA, I =1.25mA 0.55 V C B V (sat) Base-Emitter Saturation Voltage I =10mA, I =0.25mA 0.6 0.85 V BE C B I =50mA, I =1.25mA 0.7 1.05 V C B V (on) Base-Emitter On Voltage V =5V, I =2.0mA 0.55 0.75 V BE CE C f Current Gain Bandwidth Product V =5V, I =10mA, f=100MHz 125 MHz T CE C C Output Capacitance V =10V, I =0, f=1MHz 4.5 pF ob CE E NF Noise Figure V =5V, I =0.2mA 6dB CE C R =2K , f=1KHz S t Turn On Time I =10mA, I =1.0mA 150 ns ON C B1 t Turn Off Time V =3.6V, I =1.0mA 800 ns OFF BB B2 R =R =5K , R =990 1 2 L Marking AH 2002 Fairchild Semiconductor Corporation Rev. B2, December 2002BCX70H Package Dimensions SOT-23 Dimensions in Millimeters 2002 Fairchild Semiconductor Corporation Rev. B2, December 2002