BDW42G (NPN), BDW46G, BDW47G (PNP) Darlington Complementary Silicon Power Transistors This series of plastic, mediumpower silicon NPN and PNP Darlington transistors are designed for general purpose and low speed www.onsemi.com switching applications. 15 AMP DARLINGTON Features COMPLEMENTARY SILICON High DC Current Gain h = 2500 (typ) I = 5.0 Adc. FE C Collector Emitter Sustaining Voltage 30 mAdc: POWER TRANSISTORS V = 80 Vdc (min) BDW46 CEO(sus) 80100 VOLT, 85 WATT 100 Vdc (min) BDW42/BDW47 Low Collector Emitter Saturation Voltage V = 2.0 Vdc (max) I = 5.0 Adc CE(sat) C 3.0 Vdc (max) I = 10.0 Adc C 4 Monolithic Construction with BuiltIn Base Emitter Shunt resistors TO220 Compact Package These Devices are PbFree and are RoHS Compliant* 1 MAXIMUM RATINGS 2 3 Rating Symbol Value Unit TO220 Collector-Emitter Voltage V Vdc CASE 221A CEO BDW46 80 STYLE 1 BDW42, BDW47 100 Collector-Base Voltage V Vdc MARKING DIAGRAM CB BDW46 80 BDW42, BDW47 100 Emitter-Base Voltage V 5.0 Vdc EB Collector Current I 15 Adc C BDWxx Base Current I 0.5 Adc B AYWWG Total Device Dissipation P D T = 25C 85 W C Derate above 25C 0.68 W/C Operating and Storage Junction T , T 55 to +150 C J stg Temperature Range BDWxx = Device Code x = 42, 46, or 47 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be A = Assembly Location assumed, damage may occur and reliability may be affected. Y = Year WW = Work Week G = PbFree Package THERMAL CHARACTERISTICS Characteristic Symbol Max Unit ORDERING INFORMATION Thermal Resistance, R 1.47 C/W JC Device Package Shipping JunctiontoCase BDW42G TO220 50 Units/Rail (PbFree) BDW46G TO220 50 Units/Rail (PbFree) *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques BDW47G TO220 50 Units/Rail Reference Manual, SOLDERRM/D. (PbFree) Semiconductor Components Industries, LLC, 2016 Publication Order Number: August, 2016 Rev. 17 BDW42/DBDW42G (NPN), BDW46G, BDW47G (PNP) ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) C Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector Emitter Sustaining Voltage (Note 1) V Vdc CEO(sus) (I = 30 mAdc, I = 0) BDW46 80 C B BDW42/BDW47 100 Collector Cutoff Current I mAdc CEO (V = 40 Vdc, I = 0) BDW46 2.0 CE B (V = 50 Vdc, I = 0) BDW42/BDW47 2.0 CE B Collector Cutoff Current I mAdc CBO (V = 80 Vdc, I = 0) BDW46 1.0 CB E (V = 100 Vdc, I = 0) BDW42/BDW47 1.0 CB E Emitter Cutoff Current I 2.0 mAdc EBO (V = 5.0 Vdc, I = 0) BE C ON CHARACTERISTICS (Note 1) DC Current Gain h FE (I = 5.0 Adc, V = 4.0 Vdc) 1000 C CE (I = 10 Adc, V = 4.0 Vdc) 250 C CE CollectorEmitter Saturation Voltage V Vdc CE(sat) (I = 5.0 Adc, I = 10 mAdc) 2.0 C B (I = 10 Adc, I = 50 mAdc) 3.0 C B BaseEmitter On Voltage V 3.0 Vdc BE(on) (I = 10 Adc, V = 4.0 Vdc) C CE SECOND BREAKDOWN (Note 2) Second Breakdown Collector I Adc S/b Current with Base Forward Biased BDW42 V = 28.4 Vdc 3.0 CE V = 40 Vdc 1.2 CE BDW46/BDW47 V = 22.5 Vdc 3.8 CE V = 36 Vdc 1.2 CE DYNAMIC CHARACTERISTICS Magnitude of common emitter small signal short circuit current transfer ratio f 4.0 MHz T (I = 3.0 Adc, V = 3.0 Vdc, f = 1.0 MHz) C CE Output Capacitance C pF ob (V = 10 Vdc, I = 0, f = 0.1 MHz) BDW42 200 CB E BDW46/BDW47 300 SmallSignal Current Gain h 300 fe (I = 3.0 Adc, V = 3.0 Vdc, f = 1.0 kHz) C CE Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width = 300 s, Duty Cycle = 2.0%. 2. Pulse Test non repetitive: Pulse Width = 250 ms. www.onsemi.com 2