Product Information

BDX34C

BDX34C electronic component of STMicroelectronics

Datasheet
Transistor: PNP; bipolar; Darlington; 100V; 10A; 70W; TO220AB
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3: USD 0.5681 ea
Line Total: USD 1.7

976 - Global Stock
Ships to you between
Fri. 17 May to Thu. 23 May
MOQ: 3  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
1078 - WHS 1


Ships to you between
Fri. 24 May to Wed. 29 May

MOQ : 1
Multiples : 1

Stock Image

BDX34C
STMicroelectronics

1 : USD 0.8682
10 : USD 0.7293
30 : USD 0.6607
100 : USD 0.5923
500 : USD 0.55
1000 : USD 0.5299

976 - WHS 2


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 3
Multiples : 1

Stock Image

BDX34C
STMicroelectronics

3 : USD 0.5681
10 : USD 0.5083
40 : USD 0.4056
110 : USD 0.3835
1000 : USD 0.377

Read More Specifications

     
Manufacturer
Product Category
Kind Of Transistor
Mounting
Case
Polarisation
Kind Of Package
Type Of Transistor
Collector Current
Collector-Emitter Voltage
Power Dissipation
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Additional Infomation About Product

BDX33B BDX33C BDX34B BDX34C COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS DESCRIPTION The BDX33B and BDX33C are silicon Epitaxial-Base NPN power transistors in monolithic Darlington configuration mounted in Jedec TO-220 plastic package. They are intented for use in power linear and switching applications. The complementary PNP types are BDX34B and BDX34C respectively. 3 2 1 TO-220 INTERNAL SCHEMATIC DIAGRAM R1 Typ. = 10 K R2 Typ. = 150 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Unit NPN BDX33B BDX33C PNP BDX34B BDX34C V Collector-Base Voltage (I = 0) 80 100 V CBO E V Collector-Emitter Voltage (I = 0) 80 100 V CEO B I Collector Current 10 A C I Collector Peak Current 15 A CM I Base Current 0.25 A B o P 70 W Total Dissipation at T 25 C tot c o T Storage Temperature -65 to 150 C stg o T Max. Operating Junction Temperature 150 C j For PNP types voltage and current values are negative. 1/4 October 1999BDX33B BDX33C BDX34B BDX34C THERMAL DATA o R Thermal Resistance Junction-case 1.78 C/W thj-case o ELECTRICAL CHARACTERISTICS (Tcase = 25 C unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit I Collector Cut-off Current for BDX33B/34B V = 80 V 0.2 mA CBO CB (I = 0) for BDX33C/34C V = 100V 0.2 mA E CB o T = 100 C case BDX33B/34B for V = 80 V 5 mA CB BDX33C/34C V = 100 V 5 mA for CB I Collector Cut-off Current for BDX33B/34B V = 40 V 0.5 mA CEO CE (I = 0) for BDX33C/34C V = 50V 0.5 mA B CE o T = 100 C case for BDX33B/34B V = 40 V 10 mA CE for BDX33C/34C V = 50 V 10 mA CE I Emitter Cut-off Current V = 5 V 5mA EBO EB (I = 0) C V * Collector-Emitter Sustaining I =100 mA for BDX33B/34B 80 V CEO(sus) C Voltage (I = 0) for BDX33C/34C 100 V B V * Collector-emitter Sustaining I = 100 mA for BDX33B/34B 80 V CER(sus) C Voltage (R =100 ) for BDX33C/34C 100 V BE BDX33B/34B V * Collector-emitter Sustaining I = 100 mA for 80 V CEV(sus) C Voltage (V =-1.5 V) for BDX33C/34C 100 V BE V * Collector-emitter Saturation I = 3 A I = 6 mA 2.5 V CE(sat) C B Voltage V * Base-emitter Voltage I = 3 A V = 3 V 2.5 V BE C CE h * DC Current Gain I = 3 A V = 3 V 750 V FE C CE V * Parallel-Diode Forward I = 8 A 4 V F F Voltage h Small Signal Current Gain I = 1 A V = 5 V f = 1MHz 100 fe C CE * Pulsed: Pulse duration = 300 s, duty cycle 1.5 % For PNP types voltage and current values are negative. Safe Operating Area 2/4

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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