BDX53/A/B/C NPN Epitaxial Silicon Transistor March 2011 BDX53/A/B/C NPN Epitaxial Silicon Transistor Applications Hammer Drivers, Audio Amplifiers Applications Power Liner and Switching Applications Features Power Darlington TR Complement to BDX54, BDX54A, BDX54B and BDX54C respectively Equivalent Circuit C B TO-220 1 R1 R2 1.Base 2.Collector 3.Emitter R1 8.4k E R2 0.3k Absolute Maximum Ratings T = 25C unless otherwise noted C Symbol Parameter Value Units V Collector-Base Voltage : BDX53 45 V CBO : BDX53A 60 V : BDX53B 80 V : BDX53C 100 V V Collector-Emitter Voltage : BDX53 45 V CEO : BDX53A 60 V : BDX53B 80 V : BDX53C 100 V V Emitter-Base Voltage 5 V EBO I Collector Current (DC) 8 A C I *Collector Current (Pulse) 12 A CP I Base Current 0.2 A B P Collector Dissipation (T = 25C) 60 W C C T Junction Temperature 150 C J T Storage Temperature - 65 to 150 C STG 2011 Fairchild Semiconductor Corporation www.fairchildsemi.com BDX53/A/B/C Rev. B0 1 BDX53/A/B/C NPN Epitaxial Silicon Transistor Electrical Characteristics T = 25 C unless otherwise noted C Symbol Parameter Test Condition Min. Typ. Max. Units V (sus) * Collector-Emitter Sustaining Voltage CEO : BDX53 I = 100mA, I = 0 45 V C B : BDX53A 60 V : BDX53B 80 V : BDX53C 100 V I Collector Cut-off Current : BDX53 V = 45V, I = 0 200 A CBO CB E : BDX53A V = 60V, I = 0 200 A CB E : BDX53B V = 80V, I = 0 200 A CB E : BDX53C V = 100V, I = 0 200 A CB E I Collector Cut-off Current : BDX53 V = 22V, I = 0 500 A CEO CE B : BDX53A V = 30V, I = 0 500 A CE B : BDX53B V = 40V, I = 0 500 A CE B : BDX53C V = 50V, I = 0 500 A CE B I Emitter Cut-off Current V = 5V, I = 0 2 mA EBO EB C h * DC Current Gain V = 3V, I = 3A 750 FE CE C V (sat) * Collector-Emitter Saturation Voltage I = 3A, I = 12mA 2 V CE C B V (sat) * Base-Emitter Saturation Voltage I = 3A, I = 12mA 2.5 V BE C B V * Parallel Diode Forward Voltage I = 3A 1.8 2.5 V F F I = 8A 2.5 V F * Pulse Test: PW=300s, duty Cycle =1.5% Pulsed 2011 Fairchild Semiconductor Corporation www.fairchildsemi.com BDX53/A/B/C Rev. B0 2