SP001646670 BGSX22G2A10 DPDT Antenna Cross Switch Features RF CMOS DPDT antenna cross switch with power handling capability of up to 36.5 dBm Suitable for multi-mode LTE and WCDMA multi antenna applications Ultra-low insertion loss and harmonics generation 0.1 to 6.0 GHz coverage High port-to-port-isolation No decoupling capacitors required if no DC applied on RF lines General Purpose Input-Output (GPIO) Interface Small form factor 1.15mm x 1.55mm No power supply blocking required High EMI robustness RoHS and WEEE compliant package Description The BGSX22G2A10 RF MOS switch is specifically designed for LTE and WCDMA triple antenna applications. This DPDT offers low insertion loss and low harmonic generation paired with high isolation between RF ports. The switch is controlled via a GPIO interface. The on-chip controller allows power-supply voltages from 2.3V to 3.4V. The switch features direct-connect-to-battery functionality and DC-free RF ports. Unlike GaAs technology, external DC blocking capacitors at the RF Ports are only required if DC voltage is applied externally. The BGSX22G2A10 RF Switch is manufactured in Infineons patented MOS technology, offering the performance of GaAs with the economy and integration of conventional CMOS including the inherent higher ESD robustness. The device has a very small size of only 1.15 x 1.55mm2 and a maximum thickness of 0.6mm. Datasheet Summary Please read the Important Notice and Warnings at the end of this document V 1.4 www.infineon.com page 1 of 2 2017-07-12 BGSX22G2A10 DPDT Antenna Cross Switch Block diagram and ordering information Block diagram and ordering information Figure 1 BGSX22G2A10 Block diagram Table 1 Ordering Information Type Package Marking BGSX22G2A10 ATSLP-10-2 XB Trademarks All referenced product or service names and trademarks are the property of their respective owners. IMPORTANT NOTICE The information given in this document shall in no For further information on the product, technology, Edition 2017-07-12 event be regarded as a guarantee of conditions or delivery terms and conditions and prices please Published by characteristics (Beschaffenheitsgarantie) . contact your nearest Infineon Technologies office (www.infineon.com). Infineon Technologies AG With respect to any examples, hints or any typical 81726 Mnchen, Germany values stated herein and/or any information WARNINGS regarding the application of the product, Infineon Technologies hereby disclaims any and all Due to technical requirements products may warranties and liabilities of any kind, including contain dangerous substances. For information on 2017 Infineon Technologies AG. without limitation warranties of non-infringement the types in question please contact your nearest All Rights Reserved. of intellectual property rights of any third party. Infineon Technologies office. Do you have a question about this In addition, any information given in this document Except as otherwise explicitly approved by Infineon is subject to customers compliance with its Technologies in a written document signed by document obligations stated in this document and any authorized representatives of Infineon Email: erratum infineon.com applicable legal requirements, norms and Technologies, Infineon Technologies products may standards concerning customers products and any not be used in any applications where a failure of use of the product of Infineon Technologies in the product or any consequences of the use thereof Document reference customers applications. can reasonably be expected to result in personal injury. ifx1 The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customers technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application.