Product Information

BMS3004-1E

BMS3004-1E electronic component of ON Semiconductor

Datasheet
MOSFET P-Channel Power MOSFET, -75V, -68A, 8.5mO

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 250
Multiples : 1

Stock Image

BMS3004-1E
ON Semiconductor

250 : USD 1.7542
2500 : USD 1.6811
25000 : USD 1.6475
N/A

Obsolete
0 - WHS 2

MOQ : 150
Multiples : 150

Stock Image

BMS3004-1E
ON Semiconductor

150 : USD 2.9557
N/A

Obsolete
0 - WHS 3

MOQ : 1
Multiples : 1

Stock Image

BMS3004-1E
ON Semiconductor

1 : USD 9.3205
10 : USD 3.2207
50 : USD 3.024
100 : USD 2.6616
500 : USD 2.413
1000 : USD 2.2162
2500 : USD 2.1437
N/A

Obsolete
0 - WHS 4

MOQ : 20
Multiples : 1

Stock Image

BMS3004-1E
ON Semiconductor

20 : USD 3.5945
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Series
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
LoadingGif

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Ordering number : ENA1908B BMS3004 P-Channel Power MOSFET Coss Crss Tc=75C 25C t (off) d Ciss --25C t f BMS3004 I -- V I -- V D DS D GS --140 --140 Tc=25C V = --10V DS Single pulse Single pulse --120 --120 --100 --100 --80 --80 --60 --60 --40 --40 --20 --20 0 00 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0 --4.5 --5.0 IT16252 IT16253 Drain to Source Voltage, V -- V Gate to Source Voltage, V -- V DS GS R (on) -- V R (on) -- Tc DS GS DS 20 20 I = --34A Single pulse D 18 18 Single pulse 16 16 14 14 12 12 10 10 8 8 6 6 4 4 2 2 0 0 0 --1 --2 --3 --4 --5 --6 --7 --8 --9 --10 --50 --25 0 25 50 75 100 125 150 Gate to Source Voltage, V -- V IT16501 Case Temperature, Tc -- C IT16255 GS I -- V yfs -- I S SD D --1000 1000 7 V =0V V = --10V 7 GS DS 5 5 Single pulse 3 Single pulse 2 3 --100 2 7 5 3 100 2 7 --10 7 5 5 3 3 2 2 --1.0 7 5 10 3 7 2 5 --0.1 7 3 5 2 3 2 --0.01 1.0 23 5 7 2 357 23 57 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --0.1 --1.0 --10 --100 Drain Current, I -- A IT16256 Diode Forward Voltage, V -- V IT16257 D SD SW Time -- I Ciss, Coss, Crss -- V D DS 10000 100000 f=1MHz V = --48V 7 7 DD 5 V = --10V 5 GS 3 3 2 2 1000 10000 7 7 5 5 3 3 2 2 t r 100 1000 t (on) d 7 7 5 5 3 3 2 2 10 100 23 5 7 2 357 23 57 0 --5 --10 --15 --20 --25 --30 --0.1 --1.0 --10 --100 Drain Current, I -- A IT16258 IT16259 Drain to Source Voltage, V -- V D DS No. A1908-2/5 V = --3V GS V = --10V, I = --34A GS D V = --4V, I = --34A GS D 75C 25C Tc= --25C --4V --10V --8V --6V 25C --25C 25C Tc=75C Tc=75C 25C --25C 75C Tc= --25C Static Drain to Source Switching Time, SW Time -- ns Forward Transfer Admittance, yfs -- S On-State Resistance, R (on) -- m Drain Current, I -- A DS D Static Drain to Source Ciss, Coss, Crss -- pF Source Current, I -- A Drain Current, I -- A On-State Resistance, R (on) -- m S D DS

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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