BSS138LT3G ON Semiconductor

BSS138LT3G electronic component of ON Semiconductor
BSS138LT3G ON Semiconductor
BSS138LT3G MOSFETs
BSS138LT3G  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of BSS138LT3G MOSFETs across the USA, India, Europe, Australia, and various other global locations. BSS138LT3G MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. BSS138LT3G
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET 50V 200mA N-Channel
Datasheet: BSS138LT3G Datasheet (PDF)
Price (USD)
10000: USD 0.046 ea
Line Total: USD 460 
Availability : 48500
  
Ship by Thu. 11 Sep to Wed. 17 Sep
QtyUnit Price
10000$ 0.046
30000$ 0.0436
50000$ 0.043
100000$ 0.042
150000$ 0.0414
250000$ 0.0408
500000$ 0.0401

Availability 48500
Ship by Thu. 11 Sep to Wed. 17 Sep
MOQ : 10000
Multiples : 10000
QtyUnit Price
10000$ 0.046
30000$ 0.0436
50000$ 0.043
100000$ 0.042
150000$ 0.0414
250000$ 0.0408
500000$ 0.0401


Availability 1731
Ship by Thu. 18 Sep to Tue. 23 Sep
MOQ : 5
Multiples : 5
QtyUnit Price
5$ 0.1454
50$ 0.115
150$ 0.0996
500$ 0.0595
2500$ 0.0494
5000$ 0.0462


Availability 11952
Ship by Tue. 09 Sep to Thu. 11 Sep
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.308
5$ 0.2044
10$ 0.154
25$ 0.1064
100$ 0.07


Availability 48500
Ship by Thu. 11 Sep to Wed. 17 Sep
MOQ : 10000
Multiples : 10000
QtyUnit Price
10000$ 0.0644
30000$ 0.0611
50000$ 0.0602
100000$ 0.0588
150000$ 0.0579


Availability 6646
Ship by Thu. 11 Sep to Wed. 17 Sep
MOQ : 3718
Multiples : 1
QtyUnit Price
3718$ 0.0699
3753$ 0.0693
3969$ 0.0655
4049$ 0.0642
4167$ 0.0624
6135$ 0.0424


Availability 58200
Ship by Thu. 11 Sep to Wed. 17 Sep
MOQ : 10000
Multiples : 10000
QtyUnit Price
10000$ 0.063
40000$ 0.0576
60000$ 0.0536


Availability 388000
Ship by Thu. 11 Sep to Wed. 17 Sep
MOQ : 10000
Multiples : 10000
QtyUnit Price
10000$ 0.0455
20000$ 0.0435
40000$ 0.0433
60000$ 0.043

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Configuration
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance - Min
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Factory Pack Quantity :
Typical Turn-Off Delay Time
Category
Brand Category
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BSS138LT3G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BSS138LT3G and other electronic components in the MOSFETs category and beyond.

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The BSS138LT3G MOSFET is a N-Channel, depletion-mode, Field Effect Transistor (FET) manufactured by ON Semiconductor. It is specifically designed for low voltage and low current applications, and is rated to dissipate up to 500mW of power at a maximum drain-source voltage of 50V. Its maximum drain current rating is 200mA, making it suitable for switching and low voltage level shifting applications. Additionally, it features a low on-resistance of 0.17O, making it ideal for power efficiency. Other features of the BSS138LT3G MOSFET include a rise time of 190ns, a fall time of 70ns, and an operating temperature range of -55°C to 125°C.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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