BYV32-200 Switchmode Power Rectifier Features and Benefits Low Forward Voltage www.onsemi.com Low Power Loss/High Efficiency High Surge Capacity ULTRAFAST RECTIFIER 175C Operating Junction Temperature 16 A Total (8 A Per Diode Leg) 16 AMPERES, 200 VOLTS These Devices are PbFree and are RoHS Compliant* t = 35 ns rr Applications Power Supply Output Rectification 1 2, 4 Power Management 3 Instrumentation Mechanical Characteristics MARKING Case: Epoxy, Molded DIAGRAM Epoxy Meets UL 94 V0 0.125 in 4 Weight: 1.9 Grams (Approximately) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead Temperature for Soldering Purposes: AYWW TO220 260C Max. for 10 Seconds BYV32-200G CASE 221 AKA STYLE 6 ESD Rating: Human Body Model 3B Machine Model C 1 2 3 A = Assembly Location Y = Year WW = Work Week BYV32200 = Device Code G = PbFree Package AKA = Diode Polarity ORDERING INFORMATION Shipping Device Package BYV32200G TO220 50 Units / Rail (PbFree) *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2014 1 Publication Order Number: November, 2014 Rev. 5 BYV32200/DBYV32200 MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage V 200 V RRM Working Peak Reverse Voltage V RWM DC Blocking Voltage V R Average Rectified Forward Current, T = 156C I A C F(AV) Per Leg 8.0 Total Device 16 Peak Rectified Forward Current (Square Wave, 20 kHz), I 16 A FM T = 154C Per Diode Leg C Nonrepetitive Peak Surge Current I 100 A FSM (Surge applied at rated load conditions halfwave, single phase, 60 Hz) Operating Junction Temperature and Storage Temperature T , T 65 to +175 C J stg Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Conditions Symbol Value Unit Maximum Thermal Resistance, JunctiontoCase Min. Pad R 3.0 C/W JC Maximum Thermal Resistance, JunctiontoAmbient Min. Pad R 60 JA ELECTRICAL CHARACTERISTICS Characteristic Symbol Min Typical Max Unit Instantaneous Forward Voltage (Note 1) v V F (i = 5.0 A, T = 100C) 0.74 0.85 F j (i = 20 A, T = 25C) 1.01 1.15 F j Instantaneous Reverse Current (Note 1) i A R (Rated dc Voltage, T = 100C) 21 600 j (Rated dc Voltage, T = 25C) 3.5 50 j Maximum Reverse Recovery Time t ns rr 35 (I = 1.0 A, di/dt = 50 A/ s) F (I = 0.5 A, I = 1.0 A, I = 0.25 A) 25 F R REC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0% www.onsemi.com 2