Product Information

CAT25010HU4I-GT3

CAT25010HU4I-GT3 electronic component of ON Semiconductor

Datasheet
EEPROM 1KB SPI SER CMOS EEPROM

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.4382 ea
Line Total: USD 0.44

639 - Global Stock
Ships to you between
Fri. 10 May to Tue. 14 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
639 - Warehouse 1


Ships to you between Fri. 10 May to Tue. 14 May

MOQ : 1
Multiples : 1

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CAT25010HU4I-GT3
ON Semiconductor

1 : USD 0.4382
10 : USD 0.4071
100 : USD 0.3668
500 : USD 0.3599
1000 : USD 0.3507
3000 : USD 0.3185
9000 : USD 0.3185
24000 : USD 0.3117
45000 : USD 0.3036

     
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RoHS - XON
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CAT25010, CAT25020, CAT25040 EEPROM Serial 1/2/4-Kb SPI Description The CAT25010/20/40 are a EEPROM Serial 1/2/4Kb SPI devices internally organized as 128x8/256x8/512x8 bits. They feature a www.onsemi.com 16byte page write buffer and support the Serial Peripheral Interface (SPI) protocol. The device is enabled through a Chip Select (CS) input. In addition, the required bus signals are a clock input (SCK), data input (SI) and data output (SO) lines. The HOLD input may be used to pause any serial communication with the CAT25010/20/40 SOIC8 UDFN8 device. These devices feature software and hardware write protection, V SUFFIX HU4 SUFFIX including partial as well as full array protection. CASE 751BD CASE 517AZ Features 20 MHz (5 V) SPI Compatible 1.8 V to 5.5 V Supply Voltage Range SPI Modes (0,0) & (1,1) TSSOP8 Y SUFFIX 16byte Page Write Buffer CASE 948AL Selftimed Write Cycle Hardware and Software Protection PIN CONFIGURATION Block Write Protection 1 CS V CC Protect 1/4, 1/2 or Entire EEPROM Array SO Low Power CMOS Technology HOLD 1,000,000 Program/Erase Cycles SCK WP 100 Year Data Retention V SI SS Industrial and Extended Temperature Range SOIC (V), TSSOP (Y), UDFN (HU4) PDIP, SOIC, TSSOP 8Lead and UDFN 8Pad Packages For the location of Pin 1, please consult the These Devices are PbFree, Halogen Free/BFR Free, and RoHS corresponding package drawing. Compliant V CC PIN FUNCTION Pin Name Function SI CS Chip Select CS CAT25010 SO Serial Data Output CAT25020 SO WP WP Write Protect CAT25040 HOLD V Ground SS SCK SI Serial Data Input SCK Serial Clock V SS HOLD Hold Transmission Input Figure 1. Functional Symbol V Power Supply CC ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 10 of this data sheet. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: June, 2018 Rev. 26 CAT25010/DCAT25010, CAT25020, CAT25040 Table 1. ABSOLUTE MAXIMUM RATINGS Parameters Ratings Units Operating Temperature 45 to +130 C Storage Temperature 65 to +150 C Voltage on any Pin with Respect to Ground (Note 1) 0.5 to V + 0.5 V CC Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Table 2. RELIABILITY CHARACTERISTICS (Note 2) Symbol Parameter Min Units N (Note 3) Endurance 1,000,000 Program / Erase Cycles END T Data Retention 100 Years DR Table 3. D.C. OPERATING CHARACTERISTICS (V = 1.8 V to 5.5 V, T = 40C to +85C and V = 2.5 V to 5.5 V, T = 40C to +125C, unless otherwise specified.) CC A CC A Symbol Parameter Test Conditions Min Max Units I Supply Current Read, Write, V = 5.0 V, 10 MHz / 40C to 85C 2 mA CC CC SO open 5 MHz / 40C to 125C 2 mA I Standby Current V = GND or V , CS = V , 2 A SB1 IN CC CC WP = V , V = 5.0 V CC CC I Standby Current V = GND or V , CS = V , T = 40C to +85C 4 A SB2 IN CC CC A WP = GND, V = 5.0 V CC T = 40C to +125C 5 A A I Input Leakage Current V = GND or V 2 2 A L IN CC I Output Leakage CS = V , T = 40C to +85C 1 1 A LO CC A Current V = GND or V OUT CC T = 40C to +125C 1 2 A A V Input Low Voltage 0.5 0.3 V V IL CC V Input High Voltage 0.7 V V + 0.5 V IH CC CC V Output Low Voltage V > 2.5 V, I = 3.0 mA 0.4 V OL1 CC OL V Output High Voltage V > 2.5 V, I = 1.6 mA V 0.8 V V OH1 CC OH CC V Output Low Voltage V > 1.8 V, I = 150 A 0.2 V OL2 CC OL V Output High Voltage V > 1.8 V, I = 100 A V 0.2 V V OH2 CC OH CC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Table 4. PIN CAPACITANCE (Note 2) (T = 25C, f = 1.0 MHz, V = +5.0 V) A CC Symbol Test Conditions Min Typ Max Units C Output Capacitance (SO) V = 0 V 8 pF OUT OUT C Input Capacitance (CS, SCK, SI, WP, HOLD) V = 0 V 8 pF IN IN 1. The DC input voltage on any pin should not be lower than 0.5 V or higher than V + 0.5 V. During transitions, the voltage on any pin may CC undershoot to no less than 1.5 V or overshoot to no more than V + 1.5 V, for periods of less than 20 ns. CC 2. These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AECQ100 and JEDEC test methods. 3. Page Mode, V = 5 V, 25C. CC www.onsemi.com 2

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
Aptina / ON Semiconductor
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild

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