CAT25128 EEPROM Serial 128-Kb SPI Description The CAT25128 is a 128Kb Serial CMOS EEPROM device internally organized as 16Kx8 bits. This features a 64byte page write buffer and supports the Serial Peripheral Interface (SPI) protocol. The device is enabled through a Chip Select (CS) input. In addition, the www.onsemi.com required bus signals are clock input (SCK), data input (SI) and data output (SO) lines. The HOLD input may be used to pause any serial communication with the CAT25128 device. The device features software and hardware write protection, including partial as well as SOIC8 UDFN8 full array protection. V SUFFIX HU4 SUFFIX OnChip ECC (Error Correction Code) makes the device suitable CASE 751BD CASE 517AZ for high reliability applications.* Features 20 MHz SPI Compatible 1.8 V to 5.5 V Supply Voltage Range TSSOP8 SOIC8 WIDE SPI Modes (0,0) & (1,1) Y SUFFIX X SUFFIX 64byte Page Write Buffer CASE 948AL CASE 751BE Additional Identification Page with Permanent Write Protection Selftimed Write Cycle PIN CONFIGURATION Hardware and Software Protection 1 CS V CC Block Write Protection SO HOLD Protect 1/4, 1/2 or Entire EEPROM Array Low Power CMOS Technology WP SCK 1,000,000 Program/Erase Cycles V SI SS 100 Year Data Retention SOIC (X, V), TSSOP (Y), UDFN (HU4) Industrial and Extended Temperature Range 8lead SOIC, TSSOP and 8pad, UDFN Packages This Device is PbFree, Halogen Free/BFR Free, and RoHS Compliant PIN FUNCTION V CC Pin Name Function CS Chip Select SI SO Serial Data Output CS WP Write Protect CAT25128 SO WP V Ground SS HOLD SI Serial Data Input SCK SCK Serial Clock V HOLD Hold Transmission Input SS V Power Supply Figure 1. Functional Symbol CC The exposed pad for the TDFN/UDFN packages can be left floating or connected to Ground. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 13 of this data sheet. Semiconductor Components Industries, LLC, 2014 1 Publication Order Number: June, 2018 Rev. 9 CAT25128/DCAT25128 Table 1. ABSOLUTE MAXIMUM RATINGS Parameters Ratings Units Operating Temperature 45 to +130 C Storage Temperature 65 to +150 C Voltage on any Pin with Respect to Ground (Note 1) 0.5 to +6.5 V Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The DC input voltage on any pin should not be lower than 0.5 V or higher than V + 0.5 V. During transitions, the voltage on any pin may CC undershoot to no less than 1.5 V or overshoot to no more than V + 1.5 V, for periods of less than 20 ns. CC Table 2. RELIABILITY CHARACTERISTICS (Note 2) Symbol Parameter Min Units N (Notes 3, 4) Endurance 1,000,000 Program / Erase Cycles END T Data Retention 100 Years DR 2. These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AECQ100 and JEDEC test methods. 3. Page Mode, V = 5 V, 25C. CC 4. The new product revision (E) uses ECC (Error Correction Code) logic with 6 ECC bits to correct one bit error in 4 data bytes. Therefore, when a single byte has to be written, 4 bytes (including the ECC bits) are reprogrammed. It is recommended to write by multiple of 4 bytes in order to benefit from the maximum number of write cycles. Table 3. D.C. OPERATING CHARACTERISTICS MATURE PRODUCT (V = 1.8 V to 5.5 V, T = 40C to +85C and V = 2.5 V to 5.5 V, T = 40C to +125C, unless otherwise specified.) CC A CC A Symbol Parameter Test Conditions Min Max Units I Supply Current Read, V = 5.5 V, 10 MHz / 40C to 85C 2 mA CCR CC (Read Mode) SO open 5 MHz / 40C to 125C 2 mA I Supply Current Write, V = 5.5 V, 10 MHz / 40C to 85C 4 mA CCW CC (Write Mode) SO open 5 MHz / 40C to 125C 4 mA I Standby Current V = GND or V , CS = V , T = 40C to +85C 1 A SB1 IN CC CC A WP = V , HOLD = V , CC CC T = 40C to +125C 3 A V = 5.5 V A CC I Standby Current V = GND or V , CS = V , T = 40C to +85C 4 A SB2 IN CC CC A WP = GND, HOLD = GND, T = 40C to +125C 5 A V = 5.5 V A CC I Input Leakage Current V = GND or V 2 2 A L IN CC I Output Leakage CS = V , T = 40C to +85C 1 1 A LO CC A Current V = GND or V OUT CC T = 40C to +125C 1 2 A A V Input Low Voltage 0.5 0.3 V V IL CC V Input High Voltage 0.7 V V + 0.5 V IH CC CC V Output Low Voltage V > 2.5 V, I = 3.0 mA 0.4 V OL1 CC OL V Output High Voltage V > 2.5 V, I = 1.6 mA V 0.8 V V OH1 CC OH CC V Output Low Voltage V > 1.8 V, I = 150 A 0.2 V OL2 CC OL V Output High Voltage V > 1.8 V, I = 100 A V 0.2 V V OH2 CC OH CC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2