Product Information

CAT25160HU2I-GT3

CAT25160HU2I-GT3 electronic component of ON Semiconductor

Datasheet
EEPROM Serial-SPI 16K-bit 2K x 8 2.5V/3.3V/5V Automotive 8-Pin UDFN EP T/R

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.1196 ea
Line Total: USD 0.12

3284 - Global Stock
Ships to you between
Fri. 24 May to Thu. 30 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
3284 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1
Multiples : 1

Stock Image

CAT25160HU2I-GT3
ON Semiconductor

1 : USD 0.1196
3001 : USD 0.078

3284 - WHS 2


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 981
Multiples : 1

Stock Image

CAT25160HU2I-GT3
ON Semiconductor

981 : USD 0.1234
3001 : USD 0.0805

     
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CAT25080, CAT25160 8-Kb and 16-Kb SPI Serial CMOS EEPROM Description The CAT25080/25160 are 8Kb/16Kb Serial CMOS EEPROM devices internally organized as 1024x8/2048x8 bits. They feature a CAT25080, CAT25160 Table 1. ABSOLUTE MAXIMUM RATINGS Parameters Ratings Units Operating Temperature 45 to +130 C Storage Temperature 65 to +150 C Voltage on any Pin with Respect to Ground (Note 1) 0.5 to V + 0.5 V CC Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. The DC input voltage on any pin should not be lower than 0.5 V or higher than V + 0.5 V. During transitions, the voltage on any pin may CC undershoot to no less than 1.5 V or overshoot to no more than V + 1.5 V, for periods of less than 20 ns. CC Table 2. RELIABILITY CHARACTERISTICS (Note 2) Symbol Parameter Min Units N (Note 3) Endurance 1,000,000 Program / Erase Cycles END T Data Retention 100 Years DR 2. These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AECQ100 and JEDEC test methods. 3. Page Mode, V = 5 V, 25C. CC Table 3. D.C. OPERATING CHARACTERISTICS (V = 1.8 V to 5.5 V, T = 40C to +85C and V = 2.5 V to 5.5 V, T = 40C to +125C unless otherwise specified.) CC A CC A Symbol Parameter Test Conditions Min Max Units I Supply Current Read, Write, V = 5.0 V, 10 MHz / 40C to +85C 2 mA CC CC SO open 5 MHz / 40C to +125C 2 mA I Standby Current V = GND or V , CS = V , 2 A SB1 IN CC CC WP = V , V = 5.0 V CC CC I Standby Current V = GND or V , CS = V , T = 40C to +85C 4 A SB2 IN CC CC A WP = GND, V = 5.0 V CC T = 40C to +125C 5 A A I Input Leakage Current V = GND or V 2 2 A L IN CC I Output Leakage CS = V , T = 40C to +85C 1 1 A LO CC A Current V = GND or V OUT CC T = 40C to +125C 1 2 A A V Input Low Voltage 0.5 0.3 V V IL CC V Input High Voltage 0.7 V V + 0.5 V IH CC CC V Output Low Voltage V > 2.5 V, I = 3.0 mA 0.4 V OL1 CC OL V Output High Voltage V > 2.5 V, I = 1.6 mA V 0.8 V V OH1 CC OH CC V Output Low Voltage V > 1.8 V, I = 150 A 0.2 V OL2 CC OL V Output High Voltage V > 1.8 V, I = 100 A V 0.2 V V OH2 CC OH CC Table 4. PIN CAPACITANCE (Note 2) (T = 25C, f = 1.0 MHz, V = +5.0 V) A CC Symbol Test Conditions Min Typ Max Units C Output Capacitance (SO) V = 0 V 8 pF OUT OUT C Input Capacitance (CS, SCK, SI, WP, HOLD) V = 0 V 8 pF IN IN

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
Aptina / ON Semiconductor
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild

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