CAT93C76 EEPROM Serial 8-Kb Microwire Description The CAT93C76 is an 8Kb Microwire Serial EEPROM memory device which is configured as either registers of 16 bits (ORG pin at www.onsemi.com V or Not Connected) or 8 bits (ORG pin at GND). Each register can CC be written (or read) serially by using the DI (or DO) pin. The CAT93C76 is manufactured using ON Semiconductors advanced CMOS EEPROM floating gate technology. The device is designed to SOIC8 endure 1,000,000 program/erase cycles and has a data retention of 100 V, W SUFFIX years. The device is available in 8pin PDIP, SOIC and TSSOP CASE 751BD packages. Features High Speed Operation: 3 MHz V 2.5 V CC Low Power CMOS Technology PDIP8 TSSOP8 L SUFFIX Y SUFFIX 1.8 to 5.5 Volt Operation CASE 646AA CASE 948AL Selectable x8 or x16 Memory Organization Selftimed Write Cycle with Autoclear PIN CONFIGURATION Software Write Protection 1 Powerup Inadvertant Write Protection V CS CC SK NC 1,000,000 Program/Erase Cycles DI ORG DO 100 Year Data Retention GND Industrial and Extended Temperature Ranges PDIP (L), SOIC (V, W), TSSOP (Y) Sequential Read Green Package Option Available PIN FUNCTION This Device is PbFree, Halogen Free/BFR Free and RoHS Compliant Pin Name Function CS Chip Select V CC SK Serial Clock Input DI Serial Data Input ORG DO Serial Data Output DI CS V Power Supply CC DO SK GND Ground ORG Memory Organization GND NC No Connection Figure 1. Functional Symbol ORDERING INFORMATION NOTE: When the ORG pin is connected to V , the x16 organization is selected. CC See detailed ordering and shipping information in the package When it is connected to ground, the x8 organization is selected. If the ORG pin dimensions section on page 8 of this data sheet. is left unconnected, then an internal pullup device will select the x16 organization. Semiconductor Components Industries, LLC, 2013 1 Publication Order Number: May, 2018 Rev.5 CAT93C76/DCAT93C76 Table 1. ABSOLUTE MAXIMUM RATINGS Parameters Ratings Units Temperature Under Bias 55 to +125 C Storage Temperature 65 to +150 C Voltage on any Pin with Respect to Ground (Note 1) 2.0 to +V +2.0 V CC V with Respect to Ground 2.0 to +7.0 V CC Lead Soldering Temperature (10 seconds) 300 C Output Short Circuit Current (Note 2) 100 mA Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The minimum DC input voltage is 0.5 V. During transitions, inputs may undershoot to 2.0 V for periods of less than 20 ns. Maximum DC voltage on output pins is V +0.5 V, which may overshoot to V +2.0 V for periods of less than 20 ns. CC CC 2. Output shorted for no more than one second. Table 2. RELIABILITY CHARACTERISTICS (Note 2) Symbol Parameter Reference Test Method Min Units N (Note 3) Endurance MILSTD883, Test Method 1033 1,000,000 Cycles / Byte END T (Note 3) Data Retention MILSTD883, Test Method 1008 100 Years DR V (Note 3) ESD Susceptibility MILSTD883, Test Method 3015 2,000 V ZAP I (Notes 3, 4) LatchUp JEDEC Standard 17 100 mA LTH 3. These parameters are tested initially and after a design or process change that affects the parameter. 4. Latchup protection is provided for stresses up to 100 mA on I/O pins from 1 V to V + 1 V. CC Table 3. D.C. OPERATING CHARACTERISTICS (V = +1.8 V to +5.5 V unless otherwise specified.) CC Symbol Parameter Test Conditions Min Typ Max Units I Power Supply Current (Write) f = 1 MHz, V = 5.0 V 1 3 mA CC1 SK CC I Power Supply Current (Read) f = 1 MHz, V = 5.0 V 300 500 A CC2 SK CC I Power Supply Current CS = 0 V, ORG = GND 2 10 A SB1 (Standby) (x8 Mode) I Power Supply Current CS = 0 V, ORG = Float or V 0 (Note 5) 10 A SB2 CC (Standby) (x16 Mode) I Input Leakage Current V = 0 V to V 0 (Note 5) 10 A LI IN CC I Output Leakage Current V = 0 V to V , CS = 0 V 0 (Note 5) 10 A LO OUT CC I ORG Pin Leakage Current ORG = GND or ORG = V 1 10 A LORG CC V Input Low Voltage 4.5 V V 5.5 V 0.1 0.8 V IL1 CC V Input High Voltage 4.5 V V 5.5 V 2 V + 1 V IH1 CC CC V Input Low Voltage 1.8 V V < 4.5 V 0 V x 0.2 V IL2 CC CC V Input High Voltage 1.8 V V < 4.5 V V x 0.7 V + 1 V IH2 CC CC CC V Output Low Voltage 4.5 V V 5.5 V, I = 2.1 mA 0.4 V OL1 CC OL V Output High Voltage 4.5 V V 5.5 V, I = 400 A 2.4 V OH1 CC OH V Output Low Voltage 0.1 V 1.8 V V < 4.5 V, I = 100 A OL2 CC OL V Output High Voltage 1.8 V V < 4.5 V, I = 100 A V 0.2 V OH2 CC CC OH 5. 0 A is defined as less than 900 nA. Table 4. PIN CAPACITANCE (Note 3) Symbol Test Conditions Min Typ Max Units C Output Capacitance (DO) V = 0 V 5 pF OUT OUT C Input Capacitance (CS, SK, DI, ORG) V = 0 V 5 pF IN IN www.onsemi.com 2