CAT93C76VI-G-T3 ON Semiconductor

CAT93C76VI-G-T3 electronic component of ON Semiconductor
CAT93C76VI-G-T3 ON Semiconductor
CAT93C76VI-G-T3 EEPROM
CAT93C76VI-G-T3  Semiconductors
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X-On Electronics has gained recognition as a prominent supplier of CAT93C76VI-G-T3 EEPROM across the USA, India, Europe, Australia, and various other global locations. CAT93C76VI-G-T3 EEPROM are a product manufactured by ON Semiconductor. We provide cost-effective solutions for EEPROM, ensuring timely deliveries around the world.

Part No.CAT93C76VI-G-T3
Manufacturer:ON Semiconductor
Category:EEPROM
Description:EEPROM Serial-Microwire 8K-bit 1K x 8/512 x 16 2.5V/3.3V/5V 8-Pin SOIC N T/R
Datasheet:CAT93C76VI-G-T3 Datasheet (PDF)
Shipping Charges:Click here for details
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Price (USD)
  
3000: USD 0.1701 ea
Line Total: USD 510.3 
Availability : 0
  
QtyUnit Price
3000$ 0.1701
  

Availability0
Ship by Tue. 23 Jun to Mon. 29 Jun
MOQ : 3000
Multiples : 3000
QtyUnit Price
3000$ 0.1701

   
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We are delighted to provide the CAT93C76VI-G-T3 from our EEPROM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the CAT93C76VI-G-T3 and other electronic components in the EEPROM category and beyond.

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CAT93C76 8-Kb Microwire Serial EEPROM Description The CAT93C76 is an 8Kb Serial EEPROM memory device which is configured as either registers of 16 bits (ORG pin at V or Not CAT93C76 Table 1. ABSOLUTE MAXIMUM RATINGS Parameters Ratings Units Temperature Under Bias 55 to +125 C Storage Temperature 65 to +150 C Voltage on any Pin with Respect to Ground (Note 1) 2.0 to +V +2.0 V CC V with Respect to Ground 2.0 to +7.0 V CC Lead Soldering Temperature (10 seconds) 300 C Output Short Circuit Current (Note 2) 100 mA Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. The minimum DC input voltage is 0.5 V. During transitions, inputs may undershoot to 2.0 V for periods of less than 20 ns. Maximum DC voltage on output pins is V +0.5 V, which may overshoot to V +2.0 V for periods of less than 20 ns. CC CC 2. Output shorted for no more than one second. Table 2. RELIABILITY CHARACTERISTICS (Note 2) Symbol Parameter Reference Test Method Min Units N (Note 3) Endurance MILSTD883, Test Method 1033 1,000,000 Cycles / Byte END T (Note 3) Data Retention MILSTD883, Test Method 1008 100 Years DR V (Note 3) ESD Susceptibility MILSTD883, Test Method 3015 2,000 V ZAP I (Notes 3, 4) Latch Up JEDEC Standard 17 100 mA LTH 3. These parameters are tested initially and after a design or process change that affects the parameter. 4. Latchup protection is provided for stresses up to 100 mA on I/O pins from 1 V to V + 1 V. CC Table 3. D.C. OPERATING CHARACTERISTICS (V = +1.8 V to +5.5 V unless otherwise specified.) CC Symbol Parameter Test Conditions Min Typ Max Units I Power Supply Current (Write) f = 1 MHz, V = 5.0 V 1 3 mA CC1 SK CC I Power Supply Current (Read) f = 1 MHz, V = 5.0 V 300 500 A CC2 SK CC I Power Supply Current CS = 0 V, ORG = GND 2 10 A SB1 (Standby) (x8 Mode) I Power Supply Current CS = 0 V, ORG = Float or V 0 (Note 5) 10 A SB2 CC (Standby) (x16 Mode) I Input Leakage Current V = 0 V to V 0 (Note 5) 10 A LI IN CC I Output Leakage Current V = 0 V to V , CS = 0 V 0 (Note 5) 10 A LO OUT CC I ORG Pin Leakage Current ORG = GND or ORG = V 1 10 A LORG CC V Input Low Voltage 4.5 V V 5.5 V 0.1 0.8 V IL1 CC V Input High Voltage 4.5 V V 5.5 V 2 V + 1 V IH1 CC CC V Input Low Voltage 1.8 V V < 4.5 V 0 V x 0.2 V IL2 CC CC V Input High Voltage 1.8 V V < 4.5 V V x 0.7 V + 1 V IH2 CC CC CC V Output Low Voltage 4.5 V V 5.5 V, I = 2.1 mA 0.4 V OL1 CC OL V Output High Voltage 4.5 V V 5.5 V, I = 400 A 2.4 V OH1 CC OH V Output Low Voltage 1.8 V V < 4.5 V, I = 100 A 0.1 V OL2 CC OL V Output High Voltage 1.8 V V < 4.5 V, I = 100 A V 0.2 V OH2 CC OH CC 5. 0 A is defined as less than 900 nA. Table 4. PIN CAPACITANCE (Note 3) Symbol Test Conditions Min Typ Max Units C Output Capacitance (DO) V = 0 V 5 pF OUT OUT C Input Capacitance (CS, SK, DI, ORG) V = 0 V 5 pF IN IN

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild
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