Product Information

CAV93C76VE-GT3

CAV93C76VE-GT3 electronic component of ON Semiconductor

Datasheet
EEPROM 8KB MICROWIRE SER EEPROM

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.9275 ea
Line Total: USD 0.93

2635 - Global Stock
Ships to you between
Thu. 23 May to Mon. 27 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2519 - WHS 1


Ships to you between Thu. 23 May to Mon. 27 May

MOQ : 1
Multiples : 1

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CAV93C76VE-GT3
ON Semiconductor

1 : USD 0.468
10 : USD 0.4416
100 : USD 0.3876
500 : USD 0.3841
1000 : USD 0.3738
3000 : USD 0.3485
9000 : USD 0.3427
24000 : USD 0.3404

     
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CAV93C76 EEPROM Serial 8-Kb Microwire - Automotive Grade 1 Description www.onsemi.com The CAV93C76 is an EEPROM Serial 8 Kb Microwire Automotive Grade 1 device, which is configured as either registers of 16 bits (ORG pin at V or Not Connected) or 8 bits (ORG pin at CC GND). Each register can be written (or read) serially by using the DI (or DO) pin. The CAV93C76 is manufactured using ON SOIC8 TSSOP8 Semiconductors advanced CMOS EEPROM floating gate V SUFFIX Y SUFFIX technology. The device is designed to endure 1,000,000 program/erase CASE 751BD CASE 948AL cycles and has a data retention of 100 years. The device is available in 8pin SOIC and TSSOP packages. PIN CONFIGURATION Features 1 V CS CC Automotive AECQ100 Grade 1 (40C to +125C) Qualified SK NC DI ORG High Speed Operation: 2 MHz DO GND 2.5 V to 5.5 V Supply Voltage Range SOIC (V), TSSOP (Y) Selectable x8 or x16 Memory Organization (Top View) Selftimed Write Cycle with Autoclear Software Write Protection PIN FUNCTION Powerup Inadvertant Write Protection Pin Name Function Low Power CMOS Technology 1,000,000 Program/Erase Cycles CS Chip Select 100 Year Data Retention SK Serial Clock Input Sequential Read DI Serial Data Input 8pin SOIC and TSSOP Packages DO Serial Data Output This Device is PbFree, Halogen Free/BFR Free and RoHS V Power Supply CC Compliant GND Ground V ORG Memory Organization CC NC No Connection ORG NOTE: When the ORG pin is connected to V , the CC x16 organization is selected. When it is connected to DI ground, the x8 organization is selected. If the ORG pin CS CAV93C76 DO is left unconnected, then an internal pullup device will select the x16 organization. SK ORDERING INFORMATION GND See detailed ordering and shipping information in the package Figure 1. Functional Symbol dimensions section on page 8 of this data sheet. For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2013 1 Publication Order Number: April, 2019 Rev. 2 CAV93C76/DCAV93C76 Table 1. ABSOLUTE MAXIMUM RATINGS Parameters Ratings Units Storage Temperature 65 to +150 C Voltage on any Pin with Respect to Ground (Note 1) 0.5 to +6.5 V Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The minimum DC input voltage is 0.5 V. During transitions, inputs may undershoot to 2.0 V for periods of less than 20 ns. Maximum DC voltage on output pins is V +0.5 V, which may overshoot to V +2.0 V for periods of less than 20 ns. CC CC Table 2. RELIABILITY CHARACTERISTICS (Note 2) Symbol Parameter Min Units N (Note 3) Endurance 1,000,000 Program / Erase Cycles END T Data Retention 100 Years DR 2. These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AECQ100 and JEDEC test methods. 3. Block Mode, V = 5 V, 25C CC Table 3. D.C. OPERATING CHARACTERISTICS (V = +2.5 V to +5.5 V, T = 40C to +125C, unless otherwise specified.) CC A Symbol Parameter Test Conditions Min Max Units I Supply Current (Write) Write, V = 5.0 V 2 mA CC1 CC I Supply Current (Read) Read, DO open, f = 2 MHz, V = 5.0 V 500 A CC2 SK CC I Standby Current V = GND or V 5 A SB1 IN CC (x8 Mode) CS = GND, ORG = GND I Standby Current V = GND or V 3 A SB2 IN CC (x16 Mode) CS = GND, ORG = Float or V CC I Input Leakage Current V = GND to V 2 A LI IN CC I Output Leakage V = GND to V 2 A LO OUT CC Current CS = GND V Input Low Voltage 4.5 V V < 5.5 V 0.1 0.8 V IL1 CC V Input High Voltage 4.5 V V < 5.5 V 2 V + 1 V IH1 CC CC V Input Low Voltage 2.5 V V < 4.5 V 0 V x 0.2 V IL2 CC CC V Input High Voltage 2.5 V V < 4.5 V V x 0.7 V + 1 V IH2 CC CC CC V Output Low Voltage 4.5 V V < 5.5 V, I = 3 mA 0.4 V OL1 CC OL V Output High Voltage 4.5 V V < 5.5 V, I = 400 A 2.4 V OH1 CC OH V Output Low Voltage 2.5 V V < 4.5 V, I = 1 mA 0.2 V OL2 CC OL V Output High Voltage 2.5 V V < 4.5 V, I = 100 A V 0.2 V OH2 CC OH CC Table 4. PIN CAPACITANCE (Note 4) Symbol Test Conditions Min Typ Max Units C Output Capacitance (DO) V = 0 V 5 pF OUT OUT C Input Capacitance (CS, SK, DI, ORG) V = 0 V 5 pF IN IN 4. These parameters are tested initially and after a design or process change that affects the parameter. www.onsemi.com 2

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
Aptina / ON Semiconductor
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild

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