Product Information

CAV93C86YE-GT3

CAV93C86YE-GT3 electronic component of ON Semiconductor

Datasheet
EEPROM 16KB MICROWIRE SER EEPROM

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.3932 ea
Line Total: USD 1.39

0 - Global Stock
MOQ: 1  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 3000
Multiples : 3000

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CAV93C86YE-GT3
ON Semiconductor

3000 : USD 0.7603
6000 : USD 0.7536
9000 : USD 0.7467
12000 : USD 0.74
15000 : USD 0.7331
24000 : USD 0.7264
30000 : USD 0.7195
75000 : USD 0.7127
150000 : USD 0.7057

0 - WHS 2


Ships to you between Thu. 23 May to Mon. 27 May

MOQ : 3000
Multiples : 3000

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CAV93C86YE-GT3
ON Semiconductor

3000 : USD 0.5164

     
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CAV93C86 EEPROM Serial 16-Kb Microwire - Automotive Grade 1 Description The CAV93C86 is an EEPROM Serial 16 Kb Microwire www.onsemi.com Automotive Grade 1 device, which is configured as either registers of 16 bits (ORG pin at V ) or 8 bits (ORG pin at GND). Each register CC can be written (or read) serially by using the DI (or DO) pin. The CAV93C86 is manufactured using ONSemiconductors advanced CMOS EEPROM floating gate technology. The device is designed to SOIC8 V SUFFIX endure 1,000,000 program/erase cycles and has a data retention of 100 CASE 751BD years. The device is available in 8pin SOIC and TSSOP packages. Features Automotive AECQ100 Grade 1 (40C to +125C) Qualified High Speed Operation: 2 MHz TSSOP8 Low Power CMOS Technology Y SUFFIX CASE 948AL 2.5 V to 5.5 V Operation Selectable x8 or x16 Memory Organization Selftimed Write Cycle with Autoclear PIN CONFIGURATION Hardware and Software Write Protection Powerup Inadvertent Write Protection CS 1 V CC SK PE Sequential Read DI ORG Program Enable (PE) Pin DO GND 1,000,000 Program/Erase Cycles SOIC (V) and TSSOP (Y) 100 Year Data Retention 8pin SOIC and TSSOP Packages These Devices are PbFree, Halogen Free/BFR Free, and RoHS PIN FUNCTION Compliant Pin Name Function V CC CS Chip Select SK Clock Input ORG DI DI Serial Data Input CS CAV93C86 DO DO Serial Data Output SK V Power Supply CC PE GND Ground ORG Memory Organization GND PE Program Enable Figure 1. Functional Symbol Note: When the ORG pin is connected to V , the x16 organization CC ORDERING INFORMATION is selected. When it is connected to ground, the x8 pin is selected. If See detailed ordering and shipping information in the package the ORG pin is left unconnected, then an internal pullup device will dimensions section on page 6 of this data sheet. select the x16 organization. Semiconductor Components Industries, LLC, 2012 1 Publication Order Number: April, 2019 Rev. 2 CAV93C86/DCAV93C86 Table 1. ABSOLUTE MAXIMUM RATINGS Parameters Ratings Units Storage Temperature 65 to +150 C Voltage on Any Pin with Respect to Ground (Note 1) 0.5 to +6.5 V Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The DC input voltage on any pin should not be lower than 0.5 V or higher than V + 0.5 V. During transitions, the voltage on any pin may CC undershoot to no less than 1.5 V or overshoot to no more than V + 1.5 V, for periods of less than 20 ns. CC Table 2. RELIABILITY CHARACTERISTICS (Note 2) Symbol Parameter Min Units N (Note 3) Endurance 1,000,000 Program / Erase Cycles END T Data Retention 100 Years DR 2. These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AECQ100 and JEDEC test methods. 3. Block Mode, V = 5 V, 25C. CC Table 3. D.C. OPERATING CHARACTERISTICS (V = +2.5 V to +5.5 V, T =40C to +125C unless otherwise specified.) CC A Symbol Parameter Test Conditions Min Max Units I Supply Current (Write) Write, V = 5.0 V 2 mA CC1 CC I Supply Current (Read) Read, DO open, f = 2 MHz, V = 5.0 V 500 A CC2 SK CC I Standby Current V = GND or V 5 A SB1 IN CC (x8 Mode) CS = GND, ORG = GND I Standby Current V = GND or V 3 A SB2 IN CC (x16 Mode) CS = GND, ORG = Float or V CC I Input Leakage Current V = GND to V 2 A LI IN CC I Output Leakage V = GND to V 2 A LO OUT CC Current CS = GND V Input Low Voltage 4.5 V V < 5.5 V 0.1 0.8 V IL1 CC V Input High Voltage 4.5 V V < 5.5 V 2 V + 1 V IH1 CC CC V Input Low Voltage 1.8 V V < 4.5 V 0 V x 0.2 V IL2 CC CC V Input High Voltage 1.8 V V < 4.5 V V x 0.7 V + 1 V IH2 CC CC CC V Output Low Voltage 4.5 V V < 5.5 V, I = 2.1 mA 0.4 V OL1 CC OL V Output High Voltage 4.5 V V < 5.5 V, I = 400 A 2.4 V OH1 CC OH V Output Low Voltage 1.8 V V < 4.5 V, I = 1 mA 0.2 V OL2 CC OL V Output High Voltage 1.8 V V < 4.5 V, I = 100 A V 0.2 V OH2 CC OH CC Table 4. PIN CAPACITANCE (Note 4) Symbol Test Conditions Min Typ Max Units C Output Capacitance (DO) V = 0 V 5 pF OUT OUT C Input Capacitance (CS, SK, DI, ORG) V = 0 V 5 pF IN IN www.onsemi.com 2

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
Aptina / ON Semiconductor
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild

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