CM1248-08DE ESD Protection Diode Low Capacitance Features Low I/O Capacitance at 10 pF at 0 V www.onsemi.com InSystem ESD Protection to 15 kV Contact Discharge, per the IEC 6100042 International Standard Compact SMT Package Saves Board Space and Facilitates Layout 8 in SpaceCritical Applications 1 Each I/O Pin Can Withstand over 1000 ESD Strikes These Devices are PbFree and are RoHS Compliant UDFN8 DE SUFFIX CASE 517BC BLOCK DIAGRAM CM124808DE 87 6 5 DAP V N 12 3 4 Note: DAP (Die Attach Pad) is on backside of chip. MARKING DIAGRAM L48 M 1 L48 = Specific Device Code M = Date Code = PbFree Package (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping CM124808DE uDFN8 3000/Tape & Reel (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2011 1 Publication Order Number: August, 2017 Rev. 4 CM124808DE/DCM124808DE PACKAGE / PINOUT DIAGRAMS Top View CH1 (1) CH8 (8) CH2 (2) CH7 (7) CH3 (3) CH6 (6) CH4 (4) CH5 (5) 8Lead uDFN CM124808DE Table 1. PIN DESCRIPTIONS Pins Name Description (Refer to package / pinout diagrams) CHx The cathode of the respective surge protection diode, which should be connected to the node requiring transient voltage protection. (Refer to package / pinout diagrams) V The anode of the surge protection diodes. N SPECIFICATIONS Table 2. ABSOLUTE MAXIMUM RATINGS Parameter Rating Units Storage Temperature Range 65 to +150 C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Table 3. STANDARD OPERATING CONDITIONS Parameter Rating Units Operating Temperature 40 to +85 C Table 4. ELECTRICAL OPERATING CHARACTERISTICS (Note 1) Symbol Parameter Conditions Min Typ Max Unit C Channel Input Capacitance T = 25C, 0 VDC, 1 MHz 10 pF IN A 0 VDC, 1 MHz 7 15 pF C Differential Channel I/O to GND Capacitance T = 25C, 2.5 VDC, 1 MHz 0.19 pF IN A V Reverse Standoff Voltage I = 10 A, T = 25C 5.5 V RSO R A I = 1 mA, T = 25C 6.1 V R A I Leakage Current V = 5.0 VDC, T = 25C 0.25 A LEAK IN A V = 5.0 VDC 0.75 A IN V Small Signal Clamp Voltage V SIG Positive Clamp I = 10 mA, T = 25C 6.8 A Negative Clamp I = 10 mA, T = 25C 0.89 A V ESD Withstand Voltage T = 25C kV ESD A (Notes 2 and 3) Contact Discharge per IEC 6100042 standard 15 R Diode Dynamic Resistance T = 25C, I = 1 A, t = 8/20 s D A PP P Forward Conduction 0.57 Reverse Conduction 1.36 1. All parameters specified at T = 40C to +85C unless otherwise noted. A 2. Standard IEC 6100042 with C = 150 pF, R = 330 , V grounded. Discharge Discharge N 3. These measurements performed with no external capacitor on CH . X www.onsemi.com 2