CM1250-04QG ESD Protection Diode Low Capacitance Features Low I/O Capacitance at 5 pF at 0 V www.onsemi.com InSystem ESD Protection to 8 kV Contact Discharge, per the IEC 6100042 International Standard Compact SMT Package Saves Board Space and Facilitates Layout in SpaceCritical Applications Each I/O Pin Can Withstand over 1000 ESD Strikes* These Devices are PbFree and are RoHS Compliant UDFN6 QG SUFFIX CASE 517BM BLOCK DIAGRAM CM125004QG V N 65 4 12 3 V N MARKING DIAGRAM LS LS = CM125004QG ORDERING INFORMATION Device Package Shipping CM125004QG UDFN6 3000/Tape & Reel (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. *Standard test condition is IEC6100042 level 4 test circuit with each pin subjected to 8 kV contact discharge for 1000 pulses. Discharges are timed at 1 second intervals and all 1000 strikes are completed in one continuous test run. The part is then subjected to standard production test to verify that all of the tested parameters are within spec after the 1000 strikes. Semiconductor Components Industries, LLC, 2011 1 Publication Order Number: August, 2017 Rev. 4 CM125004QG/DCM125004QG PACKAGE / PINOUT DIAGRAM Top View CH1 (1) CH4 (6) V (2) V (5) N N CH2 (3) CH3 (4) 6Lead uDFN (0.4mm) Table 1. PIN DESCRIPTIONS Pins Name Description (Refer to package / pinout diagram) CHx The cathode of the respective surge protection diode, which should be connected to the node requiring transient voltage protection. (Refer to package / pinout diagram) V The anode of the surge protection diodes. N SPECIFICATIONS Table 2. ABSOLUTE MAXIMUM RATINGS Parameter Rating Units Storage Temperature Range 65 to +150 C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Table 3. STANDARD OPERATING CONDITIONS Parameter Rating Units Operating Temperature 40 to +85 C Table 4. ELECTRICAL OPERATING CHARACTERISTICS (Note 1) Symbol Parameter Conditions Min Typ Max Units C Channel Input Capacitance T = 25C, 0 VDC, 1 MHz (Note 2) 5 7 pF IN A T = 25C, 2.5 VDC, 1 MHz (Note 2) 3 pF A C Differential Channel I/O to GND Capacitance T = 25C, 2.5 VDC, 1 MHz (Note 2) 0.14 pF IN A I Leakage Current V = 3.5 VDC, T = 25C 0.10 A LEAK IN A V Small Signal Clamp Voltage V SIG Positive Clamp I = 5 mA, T = 25C 6.1 8.5 A Negative Clamp I = 5 mA, T = 25C 1.5 0.4 A V ESD Withstand Voltage kV ESD Contact Discharge per IEC 6100042 standard T = 25C (Notes 2, 4 and 5) 8 A Human Body Model, MILSTD883, Method 3015 T = 25C (Notes 2, 3 and 5) 15 A R Diode Dynamic Resistance T = 25C D A Forward Conduction (Note 2) 0.7 Reverse Conduction 2.1 1. All parameters specified at T = 40C to +85C unless otherwise noted. A 2. These parameters guaranteed by design and characterization. 3. Human Body Model per MILSTD883, Method 3015, C = 100 pF, R = 1.5 K , V grounded. Discharge Discharge N 4. Standard IEC 6100042 with C = 150 pF, R = 330 , V grounded. Discharge Discharge N 5. These measurements performed with no external capacitor on CH . X www.onsemi.com 2